SLVSHH3A March   2025  – August 2025 DRV8263-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
    2. 5.2 SPI Variant
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Electrical Characteristics
    5. 6.5 Timing Requirements
    6. 6.6 Timing Diagrams
    7. 6.7 Thermal Information
      1. 6.7.1 Transient Thermal Impedance & Current Capability
    8. 6.8 Switching Waveforms
      1. 6.8.1 Output switching transients
        1. 6.8.1.1 High-Side Recirculation
      2. 6.8.2 Wake-up Transients
        1. 6.8.2.1 HW Variant
        2. 6.8.2.2 SPI Variant
      3. 6.8.3 Fault Reaction Transients
        1. 6.8.3.1 Retry setting
        2. 6.8.3.2 Latch setting
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 PH/EN mode
        2. 7.3.2.2 PWM mode
        3. 7.3.2.3 Independent mode
        4. 7.3.2.4 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1  Over Current Protection (OCP)
        2. 7.3.4.2  Over Temperature Warning (OTW) - SPI Variant Only
        3. 7.3.4.3  Over Temperature Protection (TSD)
        4. 7.3.4.4  Off-State Diagnostics (OLP)
        5. 7.3.4.5  On-State Diagnostics (OLA) - SPI Variant Only
        6. 7.3.4.6  VM Over Voltage Monitor - SPI Variant Only
        7. 7.3.4.7  VM Under Voltage Monitor
        8. 7.3.4.8  Power On Reset (POR)
        9. 7.3.4.9  Powered off Braking (POB)
        10. 7.3.4.10 Event Priority
      5. 7.3.5 Device Functional Modes
        1. 7.3.5.1 SLEEP State
        2. 7.3.5.2 STANDBY State
        3. 7.3.5.3 Wake-up to STANDBY State
        4. 7.3.5.4 ACTIVE State
        5. 7.3.5.5 nSLEEP Reset Pulse (HW Variant, LATCHED setting Only)
      6. 7.3.6 Programming - SPI Variant Only
        1. 7.3.6.1 Serial Peripheral Interface (SPI)
        2. 7.3.6.2 Standard Frame
        3. 7.3.6.3 SPI for Multiple Peripherals
          1. 7.3.6.3.1 Daisy Chain Frame for Multiple Peripherals
      7. 7.3.7 Register Map - SPI Variant Only
        1. 7.3.7.1 User Registers
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Load Summary
    2. 8.2 Typical Application
      1. 8.2.1 HW Variant
      2. 8.2.2 SPI Variant
    3. 8.3 Power Supply Recommendations
      1. 8.3.1 Bulk Capacitance Sizing
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Device Support
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.4.1 Layout Guidelines

Each VM pin must be bypassed to ground using low-ESR ceramic bypass capacitors with recommended values of 0.1μF rated for VM. These capacitors are placed as close to the VM pins as possible with a thick trace or ground plane connection to the device GND pin.

Additional bulk capacitance is required to bypass the high current path. This bulk capacitance is placed such that the bulk capacitance minimizes the length of any high current paths. The connecting metal traces are as wide as possible, with numerous vias connecting PCB layers. These practices minimize inductance and allow the bulk capacitor to deliver high current.

VDD pin must be bypassed to ground using low-ESR ceramic 6.3V bypass capacitor with recommended values of 0.1μF.