SNOSDL9B December 2024 – May 2026 LMG5126
PRODUCTION DATA
The device integrates GAN drivers driving the integrated GAN FETs. The low side driver is powered by VCC and the high side driver is powered by the integrated boot capacitor. When the SW-pin voltage is approximately 0V by turning on the low-side FET, the integrated boot capacitor Cboot is charged from VCC through the internal boot diode. During shutdown, the gate drivers outputs are high impedance.
In case the integrated boot capacitor voltage is too low to drive the GAN FET, the hiccup mode fault protection is triggered by VBOOT-UVLO. If the integrated boot capacitors voltage is less than the UVLO threshold (VBOOT-UVLO), the low side driver turns on by force for 160ns to replenish the boot capacitor. The device allows up to two consecutive replenish switching cycles. After the maximum two consecutive boot replenish switching cycles, the device skips switching for 13 cycles. If the device fails to replenish the boot capacitor after four sets of the two consecutive replenish switching cycles, the device stops switching and enters 512 cycles of hiccup mode off-time. During the hiccup mode off-time PGOOD = low and the SS-pin is grounded.