SNOSDL9B December   2024  – May 2026 LMG5126

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Timing Requirements
    7. 5.7 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  Device Configuration
      2. 6.3.2  Device Enable/Disable (UVLO/EN)
      3. 6.3.3  Multi-Device Operation
      4. 6.3.4  Switching Frequency and Synchronization (SYNCIN)
      5. 6.3.5  Dual Random Spread Spectrum (DRSS)
      6. 6.3.6  Operation Modes (BYPASS, DEM, FPWM)
      7. 6.3.7  VCC Regulator, BIAS (BIAS-pin, VCC-pin)
      8. 6.3.8  Soft Start (SS-pin)
      9. 6.3.9  VOUT Programming (VOUT, ATRK, DTRK)
      10. 6.3.10 Protections
        1. 6.3.10.1 VOUT Overvoltage Protection (OVP)
        2. 6.3.10.2 Thermal Shutdown (TSD)
      11. 6.3.11 Power-Good Indicator (PGOOD-pin)
      12. 6.3.12 Slope Compensation (CSA, CSB)
      13. 6.3.13 Current Sense Setting and Switch Peak Current Limit (CSA, CSB)
      14. 6.3.14 Input Current Limit and Monitoring (ILIM, IMON, DLY)
      15. 6.3.15 Maximum Duty Cycle and Minimum Controllable On-time Limits
      16. 6.3.16 GAN Drivers, Integrated Boot Capacitor and Diode, and Hiccup Mode Fault Protection
      17. 6.3.17 Signal Deglitch Overview
    4. 6.4 Device Functional Modes
      1. 6.4.1 Shutdown State
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Feedback Compensation
    2. 7.2 Typical Application
      1. 7.2.1 Application
      2. 7.2.2 Design Requirements
      3. 7.2.3 Detailed Design Procedure
        1. 7.2.3.1  Custom Design With WEBENCH® Tools
        2. 7.2.3.2  Determine the Total Phase Number
        3. 7.2.3.3  Determining the Duty Cycle
        4. 7.2.3.4  Timing Resistor RT
        5. 7.2.3.5  Inductor Selection Lm
        6. 7.2.3.6  Current Sense Resisitor Rcs
        7. 7.2.3.7  Current Sense Filter RCSFA, RCSFB, CCS
        8. 7.2.3.8  Snubber Components
        9. 7.2.3.9  Vout Programming
        10. 7.2.3.10 Input Current Limit (ILIM/IMON)
        11. 7.2.3.11 Minimum Load Resistor
        12. 7.2.3.12 UVLO Divider
        13. 7.2.3.13 Soft Start
        14. 7.2.3.14 Output Capacitor Cout
        15. 7.2.3.15 Input Capacitor Cin
        16. 7.2.3.16 VCC Capacitor CVCC
        17. 7.2.3.17 BIAS Capacitor
        18. 7.2.3.18 VOUT Capacitor
        19. 7.2.3.19 Loop Compensation
      4. 7.2.4 Application Curves
        1. 7.2.4.1 Efficiency
        2. 7.2.4.2 Steady State Waveforms
        3. 7.2.4.3 Step Load Response
        4. 7.2.4.4 Thermal Performance
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Third-Party Products Disclaimer
      2. 8.1.2 Development Support
        1. 8.1.2.1 Custom Design With WEBENCH® Tools
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.1 Overview

The LMG5126 is a wide input range boost converter using integrated GaN FETs. The device provides a regulated output voltage if the input voltage is equal or lower than the adjusted output voltage. The resistor-to-digital (R2D) interface offers the user a simple and robust selection of all the device functionality.

The operation modes DEM (Diode Emulation Mode) and FPWM (Forced Pulse Width Modulation) are on-the-fly pin-selectable during operation. The peak current mode control operates with fixed switching frequency set by the RT-pin. Through the activation of the dual random spread spectrum operation, EMI mitigation is achievable at any time of the design process.

The integrated average current monitor can help monitor or limit the input current. The output voltage can be dynamically adjusted during operation (dynamic voltage scaling and envelope tracking). The adjustment is either possible by changing the analog reference voltage of the ATRK/DTRK-pin or the adjustment can be done directly with a PWM input signal on the ATRK/DTRK-pin.

The internal wide input LDOs provide a robust supply of the device functionality under different input and output voltage conditions. Due to the high drive capability and the automatic and headroom depended voltages selection, the power losses are kept at a minimum. The separate BIAS-pin can be connected to the input, output, or an external supply to further reduce power losses in the device. At all times, the internal supply voltage is monitored to avoid undefined failure handling.

The devices built-in protection features provide a safe operation under different fault conditions. There is a VI undervoltage lockout protection to avoid brownout situations. Because the input UVLO threshold and hysteresis can be configured through an external feedback divider, the brownout is avoided under the different designs. The device has an output overvoltage protection. The selectable hiccup overcurrent protection avoids excessive short circuit currents by using the internal cycle-by-cycle peak current protection. Due to the integrated thermal shutdown, the device is protected against thermal damage caused by an overload condition. All output-related fault events are monitored and indicated at the open-drain PGOOD-pin of the device.