SPVA018 August   2025 LM2904B

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2ESD Overview
    1. 2.1 What is Electrostatic Discharge?
      1. 2.1.1 ESD Cell Robustness in Semiconductors
  6. 3Types of ESD Cells
    1. 3.1 Dual Diode Configuration
      1. 3.1.1 Why Not Always Use Dual Diode Configuration?
    2. 3.2 Bootstrapped Diodes
    3. 3.3 Absorption Devices
      1. 3.3.1 Active Clamps
      2. 3.3.2 GCNMOS Clamps
    4. 3.4 Silicon Controlled Rectifiers
    5. 3.5 CER and ECR NPN Diodes
      1. 3.5.1 Measuring the Response of an ECR and CER ESD Cell
    6. 3.6 Comparison of ESD Cells
  7. 4How to Determine the ESD Structure of the Device from the Data Sheet
  8. 5How to Protect The System from In Circuit ESD/EOS Events
    1. 5.1 Using TVS Diodes and Series Resistance for Circuit Protection
    2. 5.2 Using Schottky Diodes for Circuit Protection
  9. 6How to Test an Op Amp in a System Level Circuit
    1. 6.1 ESD Protection Cell Advancements Over the Years
  10. 7Summary
  11. 8References

Using Schottky Diodes for Circuit Protection

An EOS event can also occur if the op amp has a transient triggered protection scheme. However, the protection method for an edge triggered op amp is different than a dual diode protection scheme. In the edge triggered protection, the ESD cell is only triggered at a certain dv/dt level.

Here, Schottky diodes are more appropriate to use for protection. Schottky diodes have very fast switching characteristics which are preferred for ESD/EOS surges. Since the edge triggered diode protection structure does not have a set trigger voltage, the Schottky diodes help to detect the surge event, directing most, if not all, of the surge through the diodes. Schottky diodes have a low forward bias voltage, around 0.3V. Ideally, the Schottky diodes added must have a lower forward bias voltage drop than the internal diodes. This allows the majority of the EOS current to flow through the external diodes, decreasing the likelihood of damage to the op amp.

Figure 5-5 shows an op amp in a noninverting configuration. Rp has been added to the input, as well as two Schottky diodes. Adding Rp in series with the Schottky diodes further limits the current the op amp sees from the surge event.

However, Schottky diodes have a high leakage current. Thus, if this is an important design factor, other diodes must be considered. In this example, we only have input protection because only the input side is connected externally. External connections are much more prone to EOS events. Examples of this include large induced voltages, or long sensor leads often seen in factory automation.

 Schottky Diode Input Based ProtectionFigure 5-5 Schottky Diode Input Based Protection

Sometimes, there is a need to protect the output of the op amp (see Figure 5-6). The figure below shows a similar circuit that can be used. In this case, select Rp such that Rp does not limit the output swing of the op amp. Generally, choosing a resistance between 10 - 20Ω allows for good protection and functionality. Also note that Rp is inside the feedback loop. This allows an accurate output voltage to be maintained despite the voltage dropped across Rp . Finally, notice that very low current flows through RF to the input of the circuit as the value of RF is generally much larger than Rp .

 Schottky Diode Output Based ProtectionFigure 5-6 Schottky Diode Output Based Protection

Like all circuits, there are trade-offs. Adding protection to the circuit also introduces noise to the system. Consider noise, component space, and so on when designing the circuit. However, such considerations are beyond the scope of this paper. For more details on how minimize noise, see this paper on minimizing noise while protecting your op amp.