TIDUF18A October 2022 – February 2024
The LMG352xR030-Q1 is an automotive qualified 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting. The integrated driver enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete external gate drivers. This integration, combined with a low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint. Advanced power management features include digital temperature reporting; the temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading.