Product details

Bus voltage (Max) (V) 100 Power switch MOSFET Input VCC (Min) (V) 8 Input VCC (Max) (V) 14 Peak output current (A) 1.8 Rise time (ns) 10 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 10 Prop delay (ns) 26 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Driver configuration Dual, Single
Bus voltage (Max) (V) 100 Power switch MOSFET Input VCC (Min) (V) 8 Input VCC (Max) (V) 14 Peak output current (A) 1.8 Rise time (ns) 10 Operating temperature range (C) -40 to 125 Undervoltage lockout (Typ) 8 Rating Catalog Number of channels (#) 2 Fall time (ns) 10 Prop delay (ns) 26 Iq (uA) 10 Input threshold TTL Channel input logic TTL Negative voltage handling at HS pin (V) -1 Driver configuration Dual, Single
WSON (DPR) 10 16 mm² 4 x 4
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)
  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1.8-A Peak Gate Drive Current
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Integrated Bootstrap Diode
  • Single TTL Compatible Input
  • Programmable Turnon Delays (Dead Time)
  • Enable Input Pin
  • Fast Turnoff Propagation Delays (26 ns Typical)
  • Drives 1000 pF With 15-ns Rise and Fall Time
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Package: Thermally Enhanced 10-Pin WSON
    (4 mm × 4 mm)

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

The LM5105 is a high-voltage gate driver designed to drive both the high-side and low-side N–Channel MOSFETs in a synchronous buck or half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 100 V. The single control input is compatible with TTL signal levels and a single external resistor programs the switching transition dead time through tightly matched turnon delay circuits. A high-voltage diode is provided to charge the high-side gate-drive bootstrap capacitor. The robust level shift technology operates at high speed while consuming low power and provides clean output transitions. Undervoltage lockout disables the gate driver when either the low-side or the bootstrapped high-side supply voltage is below the operating threshold. The LM5105 is offered in the thermally enhanced WSON plastic package.

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Technical documentation

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Type Title Date
* Data sheet LM5105 100-V Half-Bridge Gate Driver With Programmable Dead Time datasheet (Rev. E) PDF | HTML 25 Aug 2016
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
White paper Power Electronics in Motor Drives: Where is it? (Rev. A) 01 Oct 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage 17 Apr 2018

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Simulation model

LM5105 PSpice Transient Model (Rev. A)

SNVM166A.ZIP (49 KB) - PSpice Model
Simulation model

LM5105 TINA-TI Transient Reference Design

SNVM361.TSC (576 KB) - TINA-TI Reference Design
Simulation model

LM5105 TINA-TI Transient Spice Model

SNVM362.ZIP (11 KB) - TINA-TI Spice Model
Simulation model

LM5105 Unencrypted PSpice Transient Model

SNVMAC7.ZIP (2 KB) - PSpice Model
Simulation tool

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PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
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WSON (DPR) 10 View options

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