The
TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is
optimized for small designs through high efficiency and integrating the high-side and low-side
MOSFETs. Further space savings are achieved through current mode control, which reduces component
count, and a high switching frequency, reducing the inductor's footprint. The devices are offered
in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as
either a stand alone power supply or in tracking situations. Power sequencing is also possible by
correctly configuring the enable and the open drain power good pins.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload
situations and is enhanced by a low-side sourcing current limit which prevents current runaway.
There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent
excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal
shutdown temperature.
The
TPS50601-SP is a radiation hardened, 6.3-V, 6-A synchronous step-down converter, which is
optimized for small designs through high efficiency and integrating the high-side and low-side
MOSFETs. Further space savings are achieved through current mode control, which reduces component
count, and a high switching frequency, reducing the inductor's footprint. The devices are offered
in a thermally enhanced 20-pin ceramic, dual in-line flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as
either a stand alone power supply or in tracking situations. Power sequencing is also possible by
correctly configuring the enable and the open drain power good pins.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload
situations and is enhanced by a low-side sourcing current limit which prevents current runaway.
There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent
excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal
shutdown temperature.