Product details

Number of channels (#) 1 Power switch MOSFET, IGBT, GaNFET Peak output current (A) 8 Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 18 Features Split Output Operating temperature range (C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Prop delay (ns) 13 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 4 Driver configuration Inverting, Non-Inverting
Number of channels (#) 1 Power switch MOSFET, IGBT, GaNFET Peak output current (A) 8 Input VCC (Min) (V) 4.5 Input VCC (Max) (V) 18 Features Split Output Operating temperature range (C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Prop delay (ns) 13 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) 0 Rating Catalog Undervoltage lockout (Typ) 4 Driver configuration Inverting, Non-Inverting
SOT-23 (DBV) 6 5 mm² 2.9 x 1.6
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options
  • Low-Cost Gate-Driver Device Offering Superior
    Replacement of NPN and PNP Discrete Solutions
  • 4-A Peak Source and 8-A Peak Sink Asymmetrical
    Drive
  • Strong Sink Current Offers Enhanced Immunity
    Against Miller Turnon
  • Split Output Configuration (Allows Easy and
    Independent Adjustment of Turnon and Turnoff
    Speeds) in the UCC27511 Saves 1 Diode
  • Fast Propagation Delays (13-ns Typical)
  • Fast Rise and Fall Times (9-ns and 7-ns Typical)
  • 4.5-V to 18-V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures
    Glitch-Free Operation at Power Up and Power
    Down)
  • TTL and CMOS Compatible Input-Logic Threshold
    (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise
    Immunity
  • Dual-Input Design (Choice of an Inverting
    (IN– Pin) or Noninverting (IN+ Pin)
    Driver Configuration)
    • Unused Input Pin can be Used for Enable or
      Disable Function
  • Output Held Low When Input Pins Are Floating
  • Input Pin Absolute Maximum Voltage Levels Not
    Restricted by VDD Pin Bias Supply Voltage
  • Operating Temperature Range of –40°C
    to 140°C
  • 6-Pin DBV (SOT-23) and 6-Pin DRS (3-mm ×
    3-mm WSON With Exposed Thermal Pad) Package
    Options

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

The UCC27511 and UCC27512 single-channel, high-speed, low-side gate-driver device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27511 and UCC27512 are capable of sourcing and sinking high peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay, typically 13 ns.

UCC27511 features a dual-input design which offers flexibility of implementing both inverting (IN– pin) and noninverting (IN+ pin) configuration with the same device. Either IN+ or IN– pin can be used to control the state of the driver output. The unused input pin can be used for enable and disable functions. For safety purpose, internal pullup and pulldown resistors on the input pins ensure that outputs are held low when input pins are in floating condition. Hence the unused input pin is not left floating and must be properly biased to ensure that driver output is in enabled for normal operation.

The input pin threshold of the UCC27511 device is based on TTL and CMOS-compatible low-voltage logic which is fixed and independent of the VDD supply voltage. Wide hysteresis between the high and low thresholds offers excellent noise immunity.

The UCC27511 and UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turnon effect. The UCC27511 device also features a unique split output configuration where the gate-drive current is sourced through OUTH pin and sunk through OUTL pin. This unique pin arrangement allows the user to apply independent turnon and turnoff resistors to the OUTH and OUTL pins respectively and easily control the switching slew rates.

UCC27511 and UCC27512 are designed to operate over a wide VDD range of 4.5 to 18 V and wide temperature range of –40°C to 140°C. Internal Undervoltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power-switching devices such as GaN power-semiconductor devices.

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Technical documentation

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Type Title Date
* Data sheet UCC2751x Single-Channel, High-Speed, Low-Side Gate Driver (With 4-A Peak Source and 8-A Peak Sink) datasheet (Rev. F) 09 Dec 2013
Technical article Managing power-supply noise with a 30-V gate driver 07 Dec 2021
Application note Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver 10 Nov 2021
Application note External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application note Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
Application note How to overcome negative voltage transients on low-side gate drivers' inputs 18 Jan 2019
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse 19 Sep 2018
Application note Enable Function with Unused Differential Input 11 Jul 2018
Selection guide Power Management Guide 2018 (Rev. R) 25 Jun 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadtime 30 May 2018
Technical article Boosting efficiency for your solar inverter designs 24 May 2018
Application note Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole 16 Mar 2018
Application note Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. A) 05 Feb 2018
White paper Advancing Power Supply Solutions Through the Promise of GaN 24 Feb 2015
More literature Design Review of a Full-Featured 350-W Offline Power Converter 29 Oct 2013

Design & development

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Simulation model

UCC27511 PSpice Transient Model (Rev. B)

SLUM283B.ZIP (48 KB) - PSpice Model
Simulation model

UCC27511 Unencrypted PSpice Transient Model

SLUM488.ZIP (2 KB) - PSpice Model
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SOT-23 (DBV) 6 View options

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