UCC27511A-Q1

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Product details

Operating temperature range (°C) -40 to 125 Rating Automotive
Operating temperature range (°C) -40 to 125 Rating Automotive
SOT-23 (DBV) 6 8.12 mm² 2.9 x 2.8
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • 4A Peak Source and 8A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon
  • Split Output Configuration (Allows Easy and Independent Adjustment of Turnon and Turnoff Speeds) in the UCC27511A-Q1
  • Fast Propagation Delays (13ns typical)
  • Fast Rise and Fall Times (8ns and 7ns typical)
  • 4.5V to 18V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
  • TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise Immunity
  • Dual-Input Design (Choice of an Inverting (IN– Pin) or Non-Inverting (IN+ Pin) Driver Configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
  • Input Pins Capable of Withstanding –5V DC Below GND pin
  • Operating Temperature Range of –40°C to 140°C
  • 6-Pin DBV (SOT-23) Package Option
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device Temperature Grade 1: –40°C to 125°C Ambient Operating Temperature Range
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • 4A Peak Source and 8A Peak Sink Asymmetrical Drive
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon
  • Split Output Configuration (Allows Easy and Independent Adjustment of Turnon and Turnoff Speeds) in the UCC27511A-Q1
  • Fast Propagation Delays (13ns typical)
  • Fast Rise and Fall Times (8ns and 7ns typical)
  • 4.5V to 18V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
  • TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
  • Hysteretic-Logic Thresholds for High-Noise Immunity
  • Dual-Input Design (Choice of an Inverting (IN– Pin) or Non-Inverting (IN+ Pin) Driver Configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
  • Input Pins Capable of Withstanding –5V DC Below GND pin
  • Operating Temperature Range of –40°C to 140°C
  • 6-Pin DBV (SOT-23) Package Option

The UCC27511A-Q1 device is a compact gate driver that offers superior replacement of NPN and PNP discrete driver (buffer circuit) solutions. The UCC27511A-Q1 device is an automotive-grade single-channel low-side, high-speed gate driver rated for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The device features fast rise times, fall times, and propagation delays, making the UCC27511A-Q1 device suitable for high-speed applications. The device features 4A peak source and 8A peak sink currents with asymmetrical drive, boosting immunity against parasitic Miller turnon effect. The split output configuration enables easy and independent adjustment of rise and fall times using only two resistors and eliminating the need for an external diode.

The UCC27511A-Q1 device is a compact gate driver that offers superior replacement of NPN and PNP discrete driver (buffer circuit) solutions. The UCC27511A-Q1 device is an automotive-grade single-channel low-side, high-speed gate driver rated for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The device features fast rise times, fall times, and propagation delays, making the UCC27511A-Q1 device suitable for high-speed applications. The device features 4A peak source and 8A peak sink currents with asymmetrical drive, boosting immunity against parasitic Miller turnon effect. The split output configuration enables easy and independent adjustment of rise and fall times using only two resistors and eliminating the need for an external diode.

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Technical documentation

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Type Title Date
* Data sheet UCC27511A -Q1 Single-Channel High-Speed Low-Side Gate Driver With 4A Peak Source and 8A Peak Sink datasheet (Rev. B) PDF | HTML 17 Jan 2024
Functional safety information UCC27511A-Q1 Functional Safety, FIT Rate, Failure Mode Distribution and Pin FMA 16 Mar 2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Oct 2018

Design & development

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Package Pins Download
SOT-23 (DBV) 6 View options

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