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UCC27511A

ACTIVE

4-A/8-A single-channel gate driver with 5-V UVLO, split outputs, 5-V IN handling

Product details

Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) -5 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual inputs
Number of channels 1 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 8 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 18 Features Split Output Operating temperature range (°C) -40 to 140 Rise time (ns) 9 Fall time (ns) 7 Propagation delay time (µs) 0.013 Input threshold CMOS, TTL Channel input logic Inverting, Non-Inverting Input negative voltage (V) -5 Rating Catalog Undervoltage lockout (typ) (V) 4 Driver configuration Dual inputs
SOT-23 (DBV) 6 8.12 mm² (2.9 mm × 2.8 mm)
  • Input Pins Capable of Withstanding –5V Below GND pin
  • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon
  • Split Output Configuration (Allows Easy and Independent Adjustment of Turnon and Turnoff Speeds)
  • Fast Propagation Delays (13ns typical)
  • Fast Rise and Fall Times (8ns and 7ns typical)
  • 4.5V to 18V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
  • TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
  • Wide Hysteresis (1V typical) for High-Noise Immunity
  • Dual-Input Design (Choice of an Inverting (IN– Pin) or Non-Inverting (IN+ Pin) Driver Configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage
  • Input Pins Capable of Withstanding –5V Below GND pin
  • Low-Cost Gate-Driver Device Offering Superior Replacement of NPN and PNP Discrete Solutions
  • Strong Sink Current Offers Enhanced Immunity Against Miller Turnon
  • Split Output Configuration (Allows Easy and Independent Adjustment of Turnon and Turnoff Speeds)
  • Fast Propagation Delays (13ns typical)
  • Fast Rise and Fall Times (8ns and 7ns typical)
  • 4.5V to 18V Single Supply Range
  • Outputs Held Low During VDD UVLO (Ensures Glitch-Free Operation at Power Up and Power Down)
  • TTL and CMOS Compatible Input-Logic Threshold (Independent of Supply Voltage)
  • Wide Hysteresis (1V typical) for High-Noise Immunity
  • Dual-Input Design (Choice of an Inverting (IN– Pin) or Non-Inverting (IN+ Pin) Driver Configuration)
    • Unused Input Pin can be Used for Enable or Disable Function
  • Output Held Low when Input Pins are Floating
  • Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin Bias Supply Voltage

The UCC27511A device is a compact gate driver that offers superior replacement of NPN and PNP discrete driver (buffer circuit) solutions. The UCC27511A device is a single-channel low-side, high-speed gate driver rated for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The device features fast rise times, fall times, and propagation delays, making the UCC27511A device suitable for high-speed applications. Its asymmetrical 4A peak source and 8A peak sink currents boost immunity against parasitic Miller turnon effect. The split output configuration enables easy and independent adjustment of rise and fall times using only two resistors and eliminating the need for an external diode. Features including wide input hysteresis and negative input voltage handling enhance transient immunity.

The UCC27511A device is a compact gate driver that offers superior replacement of NPN and PNP discrete driver (buffer circuit) solutions. The UCC27511A device is a single-channel low-side, high-speed gate driver rated for MOSFETs, IGBTs, and emerging wide-bandgap power devices such as GaN. The device features fast rise times, fall times, and propagation delays, making the UCC27511A device suitable for high-speed applications. Its asymmetrical 4A peak source and 8A peak sink currents boost immunity against parasitic Miller turnon effect. The split output configuration enables easy and independent adjustment of rise and fall times using only two resistors and eliminating the need for an external diode. Features including wide input hysteresis and negative input voltage handling enhance transient immunity.

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Technical documentation

Design & development

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Evaluation board

UCC57142EVM — UCC57142 evaluation module

The UCC57142EVM is designed to primarily evaluate the UCC57142 functionality. The performance of the driver can be evaluated for capacitive loads or power devices with TO-220 footprints. The UCC57142EVM evaluation board allows for connection to various test points, such as IN, EN/FLT, OCP, and (...)
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Simulation model

UCC27511A PSpice Transient Model

SLVMCJ5.ZIP (67 KB) - PSpice model
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Simulation model

UCC27511A TINA-TI Transient Reference Design

SLVMCJ7.TSC (814 KB) - TINA-TI reference design
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Simulation model

UCC27511A TINA-TI Transient Spice Model

SLVMCJ6.ZIP (5 KB) - TINA-TI Spice model
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Calculation tool

SLURB27 — UCC27511 and UCC27512 Schematic Review Template

Design reference and reference for the UCC27511 and the UCC27512 to assist in system design.
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SOT-23 (DBV) 6 Ultra Librarian

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