Home Batteriemanagement-ICs Akkuschutz
Home
Batteriemanagement-ICs
Akkuschutz

BQ2201

LETZTE KAUFMÖGLICHKEIT

Nichtflüchtiger SRAM-Controller-IC für 1-SRAM-Bank

Jetzt bestellen
Datenblatt

BQ2201

LETZTE KAUFMÖGLICHKEIT
Datenblatt Jetzt bestellen

Produktdetails

Rating Catalog Features 1-Bank SRAM, CMOS, Non-volatile controller, Write-protection Operating current (typ) (µA) 3000 Vin (max) (V) 5.5 Operating temperature range (°C) -40 to 85
Rating Catalog Features 1-Bank SRAM, CMOS, Non-volatile controller, Write-protection Operating current (typ) (µA) 3000 Vin (max) (V) 5.5 Operating temperature range (°C) -40 to 85
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.

The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.

During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.

The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
filter Andere Akkuschutz suchen
Herunterladen

Technische Dokumentation

star =Von TI ausgewählte Top-Empfehlungen für dieses Produkt
Keine Ergebnisse gefunden. Bitte geben Sie einen anderen Begriff ein und versuchen Sie es erneut.
Alle anzeigen 1
Top-Dokumentation Typ Titel Format-Optionen Datum
* Data sheet SRAM Nonvolatile Controller Unit datasheet 05 Sep 1999

Bestellen & Qualität

Beinhaltete Information:
  • RoHS
  • REACH
  • Bausteinkennzeichnung
  • Blei-Finish/Ball-Material
  • MSL-Rating / Spitzenrückfluss
  • MTBF-/FIT-Schätzungen
  • Materialinhalt
  • Qualifikationszusammenfassung
  • Kontinuierliches Zuverlässigkeitsmonitoring
Beinhaltete Information:
  • Werksstandort
  • Montagestandort