Gehäuseinformationen
| Gehäuse | Pins HTSSOP (PWP) | 20 |
| Betriebstemperaturbereich (°C) -40 to 95 |
| Gehäusemenge | Träger 2.000 | LARGE T&R |
Merkmale von BUF08821
- 10-BIT RESOLUTION
- 8-CHANNEL P-GAMMA
- 1-CHANNEL P-VCOM
- 16x REWRITABLE NONVOLATILE MEMORY
- TWO INDEPENDENT PIN-SELECTABLE MEMORY BANKS
- RAIL-TO-RAIL OUTPUT:
300mV Minimum Swing-to-Rail (10mA)
> 300mA Maximum IOUT - LOW SUPPLY CURRENT
- SUPPLY VOLTAGE: 9V to 20V
- DIGITAL SUPPLY: 2V to 5.5V
- I2C INTERFACE: Supports 400kHz and 3.4MHz Clock Frequency
- APPLICATIONS
- TFT-LCD REFERENCE DRIVERS
Beschreibung von BUF08821
The BUF08821 offers eight programmable gamma channels plus one programmable VCOM channel.
The final gamma and VCOM values can be stored in the on-chip, nonvolatile memory. To allow for programming errors or liquid crystal display (LCD) panel rework, the BUF08821 supports up to 16 write operations to the on-chip memory.
The BUF08821 has two separate memory banks, allowing simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma and VCOM channels offer a rail-to-rail output that typically swings to within 150mV of either supply rail with a 10mA load. All channels are programmed using an I2C interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF08821 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and HIGH supply voltage operation of up to 20V. The BUF08821 is offered in a HTSSOP-20 PowerPAD package. It is specified from –40°C to +85°C.