Gehäuseinformationen
Gehäuse | Pins VSON-CLIP (DQH) | 8 |
Betriebstemperaturbereich (°C) -55 to 150 |
Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von CSD17312Q5
- Optimized for 5V Gate Drive
- Ultra Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5-mm × 6-mm Plastic Package
- APPLICATIONS
- Notebook Point-of-Load
- Point-of-Load Synchronous Buck in Networking,
Telecom and Computing Systems
NexFET is a trademark of Texas Instruments.
Beschreibung von CSD17312Q5
The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5V gate drive applications.