Gehäuseinformationen
Gehäuse | Pins PicoStar (YJC) | 3 |
Betriebstemperaturbereich (°C) -55 to 150 |
Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von CSD17381F4
- Ultra-low on-resistance
- Ultra-low Qg and Qgd
- Low threshold voltage
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- 0.36 mm height
- Integrated ESD protection diode
- Rated >4 kV HBM
- Rated >2 kV CDM
- Lead and halogen free
- RoHS compliant
Beschreibung von CSD17381F4
This 90 mΩ, 30 V N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
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