Gehäuseinformationen
Gehäuse | Pins VSONP (DQJ) | 8 |
Betriebstemperaturbereich (°C) -55 to 150 |
Gehäusemenge | Träger 2.500 | LARGE T&R |
Merkmale von CSD19534Q5A
- Ultra-Low Qg and Qgd
- Low Thermal Resistance
- Avalanche Rated
- Pb-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- SON 5 mm × 6 mm Plastic Package
Beschreibung von CSD19534Q5A
This 100 V, 12.6 mΩ, SON 5 mm × 6mm NexFET power MOSFET is designed to minimize losses in power conversion applications.
Top View For all available packages, see the orderable addendum at the end of the data sheet. Typical RθJA = 40°C/W on a 1-inch2, 2-oz. Cu pad on a 0.06-inch thick FR4 PCB. Max RθJC = 2.0°C/W, pulse duration ≤100 μs, duty cycle ≤1%