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DRV7167

VORSCHAU

Halbbrücken-GaN-Motortreiber-Leistungsstufe, 100 V, 70 A

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DRV7167

VORSCHAU
Datenblatt Jetzt bestellen

Produktdetails

Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
VQFN-FCRLF (VBN) 18 31.5 mm² 7 x 4.5
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
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Technische Dokumentation

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* Data sheet DRV7167A 100-V , 60A Half-Bridge GaN Motor Driver Power Stage datasheet (Rev. A) PDF | HTML 24 Jul 2026
Application brief 人形機器人的馬達控制 (Rev. A) PDF | HTML 05 Jun 2026
Application brief Motor Control in Humanoid Robots (Rev. A) PDF | HTML 04 Jun 2026

Design und Entwicklung

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Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
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