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DRV8263-Q1

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48-V-Vollbrücken-Motortreiber für die Automobilindustrie mit Diagnose und interner Strommessung

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DRV8263-Q1

AKTIV
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Produktdetails

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Topology Integrated FET Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) -40 to 125
VQFN-HR (VAK) 15 21 mm² 3.5 x 6

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA

  • Functional Safety-Compliant Targeted

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • DRV8263-Q1 MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 28A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI

  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection

    • Over temperature warning (SPI only)

    • Over temperature protection

    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. The device is available in two variants: HW interface and SPI. The SPI variant offers more flexibility in device configuration and fault observability.
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Technische Dokumentation

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* Data sheet DRV8263-Q1 Automotive 65V H-Bridge Driver with Integrated Current Sense and Diagnostics datasheet (Rev. A) PDF | HTML 28 Aug 2025
Application note Calculating Power Dissipation for a H-Bridge or Half Bridge Driver (Rev. A) PDF | HTML 22 Jul 2021

Design und Entwicklung

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Evaluierungsplatine

DRV8263H-Q1EVM — DRV8263-Q1 Evaluierungsmodul für Hardware-Variante

Das Evaluierungsmodul DRV8263H-Q1 EVM zeigt die Funktionen und die Leistung des DRV8263H HotRod™-Gehäuses. Das DRV8263H-Q1 ist ein vollständig integrierter Halbbrückentreiber für ein breites Spektrum von Automobilanwendungen. Der Halbbrückentreiber eignet sich für Hochstromanwendungen mit einer (...)
Benutzerhandbuch: PDF | HTML
Nicht verfügbar auf TI.com
Evaluierungsplatine

DRV8263S-Q1EVM — DRV8263-Q1 Evaluierungsmodul für SPI-Variante

Das Evaluierungsmodul DRV8263S-Q1 EVM zeigt die Funktionen und die Leistung des DRV8263S HotRod™-Gehäuses. Das DRV8263S-Q1 ist ein vollständig integrierter Halbbrückentreiber für ein breites Spektrum von Automobilanwendungen. Der Halbbrückentreiber eignet sich für Hochstromanwendungen mit einer (...)

Benutzerhandbuch: PDF | HTML
Nicht verfügbar auf TI.com
Referenzdesigns

TIDA-020094 — 48V zone reference design

This reference design demonstrates trends in advanced automotive 48V low voltage rail architectures. The design includes the 48V backbone architecture and 48V to 12V power conversion. The reference design highlights 48V load drivers across key products. These products include high side switches (...)
Design guide: PDF
Gehäuse Pins CAD-Symbole, Footprints und 3D-Modelle
VQFN-HR (VAK) 15 Ultra Librarian
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