The DRV870xD-Q1 devices are small half bridge gate drivers that use two
external N-channel MOSFETs targeted to drive unidirectional brushed-DC motors or solenoid
loads.
A PWM interface allows simple interfacing to controller circuits. An
internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for
100% duty cycle support and can be used to drive external reverse battery switch. Independent Half
Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a
cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed
off-time PWM current chopping.
The DRV870xD-Q1
devices include Smart Gate Drive technology to remove the need for any external gate components
(resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture
optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing
electromagnetic interference (EMI) with programmable slew-rate control and protects against any
gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt
gate turn on.
The DRV870xD-Q1 devices are small half bridge gate drivers that use two
external N-channel MOSFETs targeted to drive unidirectional brushed-DC motors or solenoid
loads.
A PWM interface allows simple interfacing to controller circuits. An
internal sense amplifier provides adjustable current control. Integrated Charge-Pump allows for
100% duty cycle support and can be used to drive external reverse battery switch. Independent Half
Bridge mode allows sharing of half bridges to control multiple DC motors sequentially in a
cost-efficient way. The gate driver includes circuitry to regulate the winding current using fixed
off-time PWM current chopping.
The DRV870xD-Q1
devices include Smart Gate Drive technology to remove the need for any external gate components
(resistors and Zener diodes) while protecting the external FETs. The Smart Gate Drive architecture
optimizes dead time to avoid any shoot-through conditions, provides flexibility in reducing
electromagnetic interference (EMI) with programmable slew-rate control and protects against any
gate-short conditions. Additionally, active and passive pulldowns are included to prevent any dv/dt
gate turn on.