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JFE2325

Name: JFE2325
Brand: TI
SKU: JFE2325
Price: 0.2 USD

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36V N-channel JFET matched-pair transistor with self-biased gates for electret condenser microphones

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Datenblatt

document-pdfAcrobat JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A) (Englisch) PDF | HTML

JFE2325

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Datenblatt

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Produktdetails

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

Rating

Catalog

Operating temperature range (°C)

-40 to 125

X2SON (DTQ)

6

0.8 mm² 1 x 0.8

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

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Top-Dokumentation	Typ	Titel	Format-Optionen	Datum
*	Data sheet	JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A)	PDF \| HTML	18 Jun 2026
	EVM User's guide	JFE2325 Evaluation Module User's Guide	PDF \| HTML	09 Dez 2025

Design und Entwicklung

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Evaluierungsplatine

JFE2325EVM — JFE2325 – Evaluierungsmodul

DIE Evaluierungsplatine JFE2325 ermöglicht die Integration des Bausteins JFE2325 im DTQ-Gehäuse in ein einfach zu verwendendes Standard-PDIP-Gehäuse mit einer Breite von zweimal 300 mil. Die Leiterplatte kann in einer Standard-PDIP-Buchse verwendet werden. Die Platinenabmessungen betragen 550 mil (...)

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