Gehäuseinformationen
| Gehäuse | Pins VSSOP (DGK) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 250 | SMALL T&R |
Merkmale von LM74610-Q1
- Qualified for Automotive Applications
- AEC-Q100 Qualified With the Following Results:
- Exceeds HBM ESD Classification Level 2
- Device CDM ESD Classification Level C4B
- Maximum reverse voltage of 45 V
- No Positive Voltage limitation to Anode Terminal
- Charge Pump Gate Driver for External N-Channel
MOSFET - Lower Power Dissipation than Schottky
Diode/PFET Solutions - Low Reverse Leakage Current
- Zero IQ
- Fast 2-µs Response to Reverse Polarity
- –40°C to +125°C Operating Ambient Temperature
- Can be Used in OR-ing Applications
- Meets CISPR25 EMI Specification
- Meets Automotive ISO7637 Transient
Requirements with a Suitable TVS Diode - No Peak Current Limit
Beschreibung von LM74610-Q1
The LM74610-Q1 is a controller device that can be used with an N-Channel MOSFET in a reverse polarity protection circuitry. It is designed to drive an external MOSFET to emulate an ideal diode rectifier when connected in series with a power source. A unique advantage of this scheme is that it is not referenced to ground and thus has Zero Iq.
The LM74610-Q1 controller provides a gate drive for an external N-Channel MOSFET and a fast response internal comparator to discharge the MOSFET Gate in the event of reverse polarity. This fast pull-down feature limits the amount and duration of reverse current flow if opposite polarity is sensed. The device design also meets CISPR25 Class 5 EMI specifications and automotive ISO7637 transient requirements with a suitable TVS diode.