Gehäuseinformationen
| Gehäuse | Pins WQFN (RTJ) | 20 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TPA2012D2
- Output Power By Package:
- WQFN:
- 2.1 W/Ch Into 4 Ω at 5 V
- 1.4 W/Ch Into 8 Ω at 5 V
- 720 mW/Ch Into 8 Ω at 3.6 V
- DSBGA:
- 1.2 W/Ch Into 4 Ω at 5 V
(Thermally Limited) - 1.3 W/Ch Into 8 Ω at 5 V
- 720 mW/Ch Into 8 Ω at 3.6 V
- 1.2 W/Ch Into 4 Ω at 5 V
- WQFN:
- Only Two External Components Required
- Power Supply Range: 2.5 V to 5.5 V
- Independent Shutdown Control for Each Channel
- Selectable Gain of 6, 12, 18, and 24 dB
- Internal Pulldown Resistor on Shutdown Pins
- High PSRR: 77 dB at 217 Hz
- Fast Start-Up Time (3.5 ms)
- Low Supply Current
- Low Shutdown Current
- Short-Circuit and Thermal Protection
- Space-Saving Packages
- 2.01-mm × 2.01-mm NanoFree™ DSBGA (YZH)
- 4-mm × 4-mm Thin WQFN (RTJ) With PowerPAD™
Beschreibung von TPA2012D2
The TPA2012D2 is a stereo, filter-free, Class-D audio amplifier (Class-D amp) available in a DSBGA or WQFN package. The TPA2012D2 only requires two external components for operation.
The TPA2012D2 features independent shutdown controls for each channel. The gain can be selected to 6, 12, 18, or 24 dB using the G0 and G1 gain select pins. High PSRR and differential architecture provide increased immunity to noise and RF rectification. In addition to these features, a fast start-up time and small package size make the TPA2012D2 class-D amp an ideal choice for both cellular handsets and PDAs.
The TPA2012D2 is capable of driving 1.4 W/Ch at
5 V or 720 mW/Ch at 3.6 V into 8 Ω. The TPA2012D2 is also capable of driving 4 Ω. The
TPA2012D2 is thermally limited in DSBGA and may not achieve
2.1 W/Ch for 4 Ω. The maximum output power in the DSBGA is determined by the ability of the
circuit board to remove heat. Figure 33 shows thermally limited region of the DSBGA in
relation to the WQFN package. The TPA2012D2 provides thermal and short-circuit protection.