Gehäuseinformationen
| Gehäuse | Pins CFP (HKH) | 20 |
| Betriebstemperaturbereich (°C) 25 to 25 |
| Gehäusemenge | Träger 25 | TUBE |
Merkmale von TPS50601A-SP
- 5962-10221:
- Radiation hardened up to TID 100 krad(Si)
- ELDRS free 100 krad(Si) – 10 mrad(Si)/s
- Single
lhup (SEL) Immune to
LET = 75 MeV-cm2/mg - SEB and SEGR immune to 75 MeV-cm2/mg, SOA Curve Available
- SET/SEFI Cross-section plot available
- peak efficiency: 96.6% (VO = 3.3 V)
- Integrated 58-mΩ/50-mΩ MOSFETs
- Power rail: 3 to 7 V on VIN
- 6-A Maximum output current
- Flexible
switching frequency options:
- 100-kHz to 1-MHz Adjustable internal oscillator
- External sync capability: 100 kHz to 1 MHz
- Sync pin can be configured as a 500-kHz output for master/slave applications
- 0.804-V ±1.5% Voltage reference overtemperature, radiation, and line and load regulation
- Monotonic start-up into prebiased outputs
- Adjustable soft start through external capacitor
- Input enable and power-good output for power sequencing
- Power good output monitor for undervoltage and overvoltage
- Adjustable input undervoltage lockout (UVLO)
- 20-Pin Ultra-small, thermally-enhanced ceramic flatpack package (hkh) for space applications
Beschreibung von TPS50601A-SP
The TPS50601A-SP is a radiation hardened, 7-V, 6-A synchronous step-down converter, which is optimized for small designs through high efficiency and integrating the high-side and low-side MOSFETs. Further space savings are achieved through current mode control, which reduces component count, and a high switching frequency, reducing the inductor’s footprint. The devices are offered in an ultra small, thermally enhanced 20-pin ceramic flatpack package.
The output voltage startup ramp is controlled by the SS/TR pin which allows operation as either a stand alone power supply or in tracking situations. Power sequencing is also possible by correctly configuring the enable and the open drain power good pins. In addition, the TPS50601A-SP can be configured in master-slave mode to provide up to 12-A of output current.
Cycle-by-cycle current limiting on the high-side FET protects the device in overload situations and is enhanced by a low-side sourcing current limit which prevents current runaway. There is also a low-side sinking current limit which turns off the low-side MOSFET to prevent excessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermal shutdown temperature.