Gehäuseinformationen
| Gehäuse | Pins VSON (DRB) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TPS737
- Stable with 1-µF or larger ceramic output capacitor
- Input voltage range: 2.2 V to 5.5 V
- Ultra-low dropout voltage
- Legacy silicon: 130 mV typical at 1 A
- New silicon, M3 suffix: 122 mV typical at 1 A
- Excellent load transient response—even with only 1-µF output capacitor
- NMOS topology delivers low reverse leakage current
- Initial accuracy: 1%
- Overall accuracy over line, load, and temperature
- Legacy silicon: 3%
- New silicon, M3 suffix: 1.5%
- Less than 20 nA typical IQ in shutdown mode
- Thermal shutdown and current limit for fault protection
- Available in multiple output voltage versions:
- Adjustable output: 1.20 V to 5.5 V
- Custom outputs available using factory package-level programming
Beschreibung von TPS737
The TPS737 linear low-dropout (LDO) voltage regulator uses an NMOS pass transistor in a voltage-follower configuration. This topology is relatively insensitive to the output capacitor value and ESR, allowing for a wide variety of load configurations. Load transient response is excellent, even with a small 1-µF ceramic output capacitor. The NMOS topology also allows for very low dropout.
The TPS737 uses an advanced BiCMOS process to yield high precision while delivering very low dropout voltages and low ground pin current. Part numbers with the M3 suffix use an updated design on the latest TI process technology. Current consumption, when not enabled, is less than 20 nA and is designed for portable applications. This device is protected by thermal shutdown and foldback current limit.
For applications that require higher output voltage accuracy, consider TI’s TPS7A37 1% overall accuracy, 1-A low-dropout voltage regulator.