Gehäuseinformationen
| Gehäuse | Pins VSON (DRC) | 10 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von TS3USB221E
- VCC operation of 2.3V to 3.6V
- Switch I/OS accept signals up to 5.5V
- 1.8V compatible control-pin inputs
- Low-power mode when OE is disabled (1µA)
- rON = 6Ω maximum
- ΔrON = 0.2Ω typical
- CIO(ON) = 7pf maximum
- Low power consumption (30µA maximum)
- ESD performance tested:
- 7000V human body model per JEDEC JS-001
- 1000V charged-device model per JEDEC JS-002
- ESD performance I/O port to GND:
- 12kV human body model (JEDEC JS-001)
- ±7kV contact discharge (IEC 61000-4-2)
- High bandwidth (1GHz typical)
Beschreibung von TS3USB221E
The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras, and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-to-bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).
The TS3USB221E integrates ESD protection cells on all pins, is available in a SON package (3mm × 3mm) as well as in a tiny µQFN package (2mm × 1.5mm) and is characterized over the free-air temperature range from –40°C to 85°C.