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UCC27712

AKTIV

Halbbrückentreiber, 1,8/2,8 A, 620 V, mit Sperre

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Datenblatt

UCC27712

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Bootstrap supply voltage (max) (V) 620 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
Bootstrap supply voltage (max) (V) 620 Power switch IGBT, MOSFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 20 Peak output current (A) 2.8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 10 Rating Catalog Propagation delay time (µs) 0.1 Rise time (ns) 16 Fall time (ns) 10 Iq (mA) 0.25 Input threshold CMOS, TTL Channel input logic Noninverting Switch node voltage (V) -11 Features Interlock Driver configuration CMOS compatible, Dual, Noninverting, TTL compatible
SOIC (D) 8 29.4 mm² 4.9 x 6
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C
  • High-side and low-side configuration
  • Dual inputs with output interlock and 150-ns deadtime
  • Fully operational up to 620-V, 700-V absolute maximum on HB pin
  • 10-V to 20-V VDD recommended range
  • Peak output current 2.8-A sink, 1.8-A source
  • dv/dt immunity of 50 V/ns
  • Logic operational up to –11 V on HS pin
  • Negative voltage tolerance on inputs of –5 V
  • Large negative transient safe operating area
  • UVLO protection for both channels
  • Small propagation delay (100-ns typical)
  • Delay matching (12-ns typical)
  • Floating channel designed for bootstrap operation
  • Low quiescent current
  • TTL and CMOS compatible inputs
  • Industry standard SOIC-8 package
  • All parameters specified over temperature range, –40 °C to +125 °C

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.

The UCC27712 is a 620-V high-side and low-side gate driver with 1.8-A source, 2.8-A sink current, targeted to drive power MOSFETs or IGBTs.

The recommended VDD operating voltage is 10-V to 20-V for IGBT’s and 10-V to 17-V for power MOSFETs.

The UCC27712 includes protection features where the outputs are held low when the inputs are left open or when the minimum input pulse width specification is not met. Interlock and deadtime functions prevent both outputs from being turned on simultaneously. In addition, the device accepts a wide range bias supply range and offers UVLO protection for both the VDD and HB bias supply.

Developed with TI’s state of the art high-voltage device technology, the device features robust drive with excellent noise and transient immunity including large negative voltage tolerance on its inputs, high dV/dt tolerance, wide negative transient safe operating area (NTSOA) on the switch node (HS), and interlock.

The device consists of one ground-referenced channel (LO) and one floating channel (HO) which is designed for operating with bootstrap or isolated power supplies. The device features fast propagation delays and excellent delay matching between both channels. On the UCC27712, each channel is controlled by its respective input pins, HI and LI.
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Technische Dokumentation

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Typ Titel Datum
* Data sheet UCC27712 620-V, 1.8-A, 2.8-A High-Side Low-Side Gate Driver with Interlock datasheet (Rev. B) PDF | HTML 05 Mär 2020
Application note Selecting Gate Drivers for HVAC Systems PDF | HTML 04 Apr 2024
Technical article Selecting the right level of integration to meet motor design requirements PDF | HTML 04 Jan 2024
Application note Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08 Sep 2023
Application note Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12 Mai 2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28 Feb 2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28 Feb 2020
More literature Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29 Okt 2018
Technical article How to achieve higher system robustness in DC drives, part 3: minimum input pulse PDF | HTML 19 Sep 2018
Technical article How to achieve higher system robustness in DC drives, part 2: interlock and deadti PDF | HTML 30 Mai 2018
Technical article How to achieve higher system robustness in DC drives, part 1: negative voltage PDF | HTML 17 Apr 2018
EVM User's guide Using the UCC27712EVM-287 15 Jun 2017

Design und Entwicklung

Weitere Bedingungen oder erforderliche Ressourcen enthält gegebenenfalls die Detailseite, die Sie durch Klicken auf einen der unten stehenden Titel erreichen.

Evaluierungsplatine

UCC27712EVM-287 — UCC27712 620-V-, 1,8-A-, 2,8-A-High-Side-Low-Side-Gate-Treiber mit Steckverbindungen – Evaluierungsm

UCC27712EVM-287 is designed for evaluating UCC27712D, which is a 620V half bridge gate driver with high source and sink peak current capability. This EVM could be served to evaluate the driver IC against its datsheet. The EVM can also be used as Driver IC component selection guide. The EVM can be (...)
Benutzerhandbuch: PDF
Nicht verfügbar auf TI.com
Simulationsmodell

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UCC27712 TINA-TI Transient Spice Model

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