The ISO5852S device is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage.
An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overcurrent condition. Upon a DESAT detect, a mute logic immediately blocks the output of the isolator and initiates a soft-turnoff procedure which disables the OUTH pin and pulls the OUTL pin to low over a time span of 2 µs. When the OUTL pin reaches 2 V with respect to the most-negative supply potential, V EE2, the gate-driver output is pulled hard to the V EE2 potential, turning the IGBT immediately off.
When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. Mute logic is activated through the soft-turnoff period. The FLT output condition is latched and can be reset only after the RDY pin goes high, through a low-active pulse at the RST input.
When the IGBT is turned off during normal operation with a bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low-impedance path which prevents the IGBT from dynamic turnon during high-voltage transient conditions.
The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input-side and output-side supplies. If either side has insufficient supply, the RDY output goes low, otherwise this output is high.
The ISO5852S device is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
La ISO5852SDWEVM-017 es una tarjeta compacta de controlador de puerta aislado de doble canal que proporciona el accionamiento, las tensiones de polarización, la protección y el diagnóstico necesarios para los módulos de potencia del transistor de efecto de campo de semiconductor de óxido (MOSFET) (...)
This evaluation module, featuring ISO5852S reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.
The TIDA-00195 reference design consists of a 22kW power stage with TI’s new reinforced isolated IGBT gate driver ISO5852S intended for motor control in various applications. This design allows performance evaluation of the ISO5852S in 3-phase inverter incorporating 1200V rated IGBT modules (...)
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
Los productos recomendados pueden tener parámetros, módulos de evaluación o diseños de referencia relacionados con este producto de TI.
El contenido lo proporcionan “tal como está” TI y los colaboradores de la comunidad y no constituye especificaciones de TI. Consulte los términos de uso.
Si tiene alguna pregunta sobre calidad, encapsulados o pedido de productos de TI, consulte el servicio de asistencia de TI.