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TPS28225

ACTIVO

Detalles del producto

Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
Bootstrap supply voltage (max) (V) 33 Power switch MOSFET Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 8 Operating temperature range (°C) -40 to 125 Undervoltage lockout (typ) (V) 3.5 Rating Catalog Propagation delay time (µs) 0.014 Rise time (ns) 10 Fall time (ns) 5 Iq (mA) 0.35 Input threshold TTL Channel input logic TTL Switch node voltage (V) 0 Features (x1) PWM, Synchronous Rectification Driver configuration Single
VSON (DRB) 8 9 mm² (3 mm × 3 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm)
  • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
  • Wide Power System Train Input Voltage: 3V Up to 27V
  • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
  • Capable to Drive MOSFETs with ≥40A Current per Phase
  • High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
  • Capable to Propagate <30ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers
  • Drives Two N-Channel MOSFETs with 14ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5V Up to 8.8V With Best Efficiency at 7V to 8V
  • Wide Power System Train Input Voltage: 3V Up to 27V
  • Wide Input PWM Signals: 2.0V up to 13.2V Amplitude
  • Capable to Drive MOSFETs with ≥40A Current per Phase
  • High Frequency Operation: 14ns Propagation Delay and 10ns Rise/Fall Time Allow FSW – 2MHz
  • Capable to Propagate <30ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3mm x 3mm VSON-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

The TPS28225 is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The TPS28225 is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8V gate drive voltage, 14ns adaptive dead-time control, 14ns propagation delays and high-current 2A source and 4A sink drive capability. The 0.4Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.

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Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos TPS28225 High-Frequency 4A Sink Synchronous MOSFET Driver datasheet (Rev. E) PDF | HTML 19/01/2024
Nota sobre la aplicación Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25/03/2024
Nota sobre la aplicación Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 8/09/2023
Nota sobre la aplicación Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17/02/2022
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28/02/2020
Más documentación Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29/10/2018
Guía de selección Power Management Guide 2018 (Rev. R) 25/06/2018
Más documentación Power Loss Calculation for Sync Buck Converter 14/02/2007

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Modelo de simulación

TPS28225 PSpice Transient Model

SLUM287.ZIP (36 KB) - Modelo PSpice
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Modelo de simulación

TPS28225 TINA-TI Transient Reference Design

SLUM289.TSC (83 KB) - Diseño de referencia TINA-TI
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Modelo de simulación

TPS28225 TINA-TI Transient Spice Model

SLUM290.ZIP (29 KB) - Modelo TINA-TI Spice
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Modelo de simulación

TPS28225 Unencrypted PSpice Transient Model

SLUM496.ZIP (3 KB) - Modelo PSpice
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