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UCC27624V

ACTIVO

Control. de lado bajo y doble canal de 5 A/5 A con UVLO de 8 V, VDD de 30 V y retardo de prop. bajo

Detalles del producto

Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 8 Driver configuration Dual, Non-Inverting
Number of channels 2 Power switch GaNFET, IGBT, MOSFET Peak output current (A) 5 Input supply voltage (min) (V) 4.5 Input supply voltage (max) (V) 26 Features Enable pin Operating temperature range (°C) -40 to 150 Rise time (ns) 6 Fall time (ns) 10 Propagation delay time (µs) 0.017 Input threshold CMOS, TTL Channel input logic Dual, Non-Inverting Input negative voltage (V) -10 Rating Catalog Undervoltage lockout (typ) (V) 8 Driver configuration Dual, Non-Inverting
SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) VSSOP (DGK) 8 14.7 mm² (3 mm × 4.9 mm) HVSSOP (DGN) 8 14.7 mm² (3 mm × 4.9 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm)
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute hhhhmaximum VDD voltage: 30V
  • Wide VDD operating range from 9.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C
  • Typical 5A peak source and sink drive current for each channel
  • Input and enable pins capable of handling –10V
  • Output capable of handling –2V transients
  • Absolute hhhhmaximum VDD voltage: 30V
  • Wide VDD operating range from 9.5V to 26V with UVLO
  • Two independent gate drive channels
  • Independent enable function for each output
  • Hysteretic-logic thresholds for high noise immunity
  • VDD independent input thresholds (TTL compatible)
  • Fast propagation delays (17ns typical)
  • Fast rise and fall times (6ns and 10ns typical)
  • 1ns typical delay matching between the two channels
  • Two channels can be paralleled for higher drive current
  • SOIC8 PowerPAD™ and VSSOP8 PowerPAD™ package options
  • Operating junction temperature range of –40°C to 150°C

The UCC27624V is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT and SiC power switches. UCC27624V has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624V can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624V also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

The UCC27624V is a dual-channel, high-speed, low-side gate driver that effectively drives MOSFET, IGBT and SiC power switches. UCC27624V has a typical peak drive strength of 5A, which reduces rise and fall times of the power switches, lowers switching losses, and increases efficiency. The device’s fast propagation delay (17ns typical) yields better power stage efficiency by improving the deadtime optimization, pulse width utilization, control loop response, and transient performance of the system.

UCC27624V can handle –10V at its inputs, which improves robustness in systems with moderate ground bouncing. The inputs are independent of supply voltage and can be connected to most controller outputs for maximum control flexibility. An independent enable signal allows the power stage to be controlled independently of main control logic. In the event of a system fault, the gate driver can quickly shut-off by pulling enable low. Many high-frequency switching power supplies exhibit noise at the gate of the power device, which can get injected into the output pin on the gate driver and can cause the driver to malfunction. The device’s transient reverse current and reverse voltage capability allow it to tolerate noise on the gate of the power device or pulse-transformer and avoid driver malfunction.

The UCC27624V also features undervoltage lockout (UVLO) for improved system robustness. When there is not enough bias voltage to fully enhance the power device, the gate driver output is held low by the strong internal pull down MOSFET.

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UCC27624 ACTIVO Control. de lado bajo y doble canal de 5 A/5 A con UVLO de 4 V, VDD de 30 V y retardo de prop. bajo UCC27624 has 5V UVLO versus UCC27624V's 8V UVLO

Documentación técnica

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos UCC27624V 30V, 5A, Dual-Channel, 8V-UVLO, Low-Side Gate Driver with –10V Input Capability datasheet (Rev. A) PDF | HTML 23/03/2026
Product overview UCC27624: Enabling Higher Efficiency in a Smaller Package (Rev. A) PDF | HTML 29/05/2026
Nota sobre la aplicación Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs PDF | HTML 22/01/2024
Application brief External Gate Resistor Selection Guide (Rev. A) 28/02/2020

Diseño y desarrollo

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Placa de evaluación

UCC57142EVM — Módulo de evaluación UCC57142

El UCC57142EVM está diseñado principalmente para evaluar la funcionalidad de UCC57142. El rendimiento del controlador se puede evaluar para cargas capacitivas o dispositivos de potencia con espacios para TO-220. La placa de evaluación UCC57142EVM permite la conexión a varios puntos de prueba, como (...)
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Modelo de simulación

UCC27624V PSpice Model

SLUM963.ZIP (22 KB) - Modelo PSpice
Productos y hardware compatibles
Encapsulado Pines Símbolos CAD, huellas y modelos 3D
SOIC (D) 8 Ultra Librarian
VSSOP (DGK) 8 Ultra Librarian
HVSSOP (DGN) 8 Ultra Librarian
HSOIC (DDA) 8 Ultra Librarian

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