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Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 0.0022 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
VQFN-FCRLF (VBN) 18 31.5 mm² (7 mm × 4.5 mm)
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 60Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7167A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

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Application brief Motor Control in Humanoid Robots (Rev. A) PDF | HTML 2026. 6. 4

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레퍼런스 디자인

TIDA-010979 — 산업용 통신을 지원하는 48V 1kW 로봇 관절 모터 컨트롤 레퍼런스 설계

이 레퍼런스 설계는 산업용 이더넷 연결 모터 드라이버를 제어하는 TI Sitara™ MCU- AM261x 장치를 특징으로 합니다. 이 설계는 직경 70mm PCB(인쇄 회로 보드)를 사용하여 휴머노이드 로봇 관절(48V, 1kW Eyoubot 모터)을 구동합니다. 이 설계는 소형 폼 팩터와 단순화된 통합 플랫폼을 보여줍니다. 이 플랫폼에는 세 개의 DRV7167 하프 브리지 GaN 모터 드라이브 전력 단계를 사용하는 고전력 밀도 섹션, AM2612 500MHz R5F 코어 MCU 및 AMC0106 기능 절연 델타-시그마 (...)

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VQFN-FCRLF (VBN) 18 Ultra Librarian

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