홈 모터 드라이버 Gallium nitride (GaN) motor drivers
홈
모터 드라이버
Gallium nitride (GaN) motor drivers
신규

DRV7167

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100V 70A 하프 브리지 GaN 모터 드라이버 전력계

지금 주문
데이터 시트

DRV7167

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데이터 시트 지금 주문

제품 상세 정보

Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 8.8 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 100 RDS(ON) (HS + LS) (Ω) 8.8 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
VQFN-FCRLF (VBN) 18 31.5 mm² 7 x 4.5
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 70Arms, 250A (pulsed, 300 µs)
    • Supports upto 500 kHz PWM switching frequency
    • Excellent propagation delay (20ns typical) and matching (2ns typical)
    • Turn-on and turn-off slew-rate control for both FETs
    • Zero-voltage detection (ZVD) reporting for optimizing dead-time in soft switching applications
    • Single PWM input option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Integrated protection features
    • Short circuit protection in Independent Inout Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, under-voltage and short-circuit events
    • Supply rail undervoltage lockout protection
  • Package optimized for easy PCB layout
    • Exposed top QFN package for top-side cooling
    • Large GND pad for bottom-side cooling
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 2.2 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 70Arms, 250A (pulsed, 300 µs)
    • Supports upto 500 kHz PWM switching frequency
    • Excellent propagation delay (20ns typical) and matching (2ns typical)
    • Turn-on and turn-off slew-rate control for both FETs
    • Zero-voltage detection (ZVD) reporting for optimizing dead-time in soft switching applications
    • Single PWM input option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Integrated protection features
    • Short circuit protection in Independent Inout Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, under-voltage and short-circuit events
    • Supply rail undervoltage lockout protection
  • Package optimized for easy PCB layout
    • Exposed top QFN package for top-side cooling
    • Large GND pad for bottom-side cooling

The DRV7167A is a 100V half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consist of two 100V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The DRV7167A is available in 7.0mm × 4.5mm × 0.89mm lead-free packages and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the GVDD voltage. A proprietary bootstrap voltage regulation technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device supports turn-on and turn-off slew-rate control for both FETs, single PWM mode for use with IO-limited controllers, short-circuit protection (SCP) , Over-Temperature Detection (OTD) and zero-voltage detection (ZVD) reporting to minimize third quandrant condution time.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7167A is a 100V half-bridge power stage, with integrated gate-driver and enhancement-mode Gallium Nitride (GaN) FETs. The device consist of two 100V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration.

GaN FETs provide significant advantages for power conversion as they have zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The DRV7167A is available in 7.0mm × 4.5mm × 0.89mm lead-free packages and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the GVDD voltage. A proprietary bootstrap voltage regulation technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range. The device supports turn-on and turn-off slew-rate control for both FETs, single PWM mode for use with IO-limited controllers, short-circuit protection (SCP) , Over-Temperature Detection (OTD) and zero-voltage detection (ZVD) reporting to minimize third quandrant condution time.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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* Data sheet DRV7167A 100-V , 70A Half-Bridge GaN Motor Driver Power Stage datasheet PDF | HTML 2025/10/01

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

레퍼런스 디자인

TIDA-010979 — 산업용 통신을 지원하는 48V 1KW 로봇 조인트 모터 컨트롤 레퍼런스 설계

이 레퍼런스 설계는 산업용 이더넷 연결 모터 드라이브를 처리하는 TI Sitara™ MCU-AM261x 장치를 특징으로 합니다. 이 설계는 직경 70mm PCB(인쇄 회로 보드)를 사용하여 휴머노이드 로봇 조인트(48V, 1kW Eyoubot 모터)를 구동합니다. 이 설계는 소형 폼 팩터와 단순화된 통합 플랫폼을 보여줍니다. 이 플랫폼에는 3개의 DRV7167 하프 브리지 GaN-FET를 사용하는 고전력 밀도 전력계, AM2612 500MHz R5F 코어 MCU와 AMC0106 기능 절연된 델타-시그마 모듈레이터를 사용하는 정확한 (...)
Design guide: PDF
패키지 핀 CAD 기호, 풋프린트 및 3D 모델
VQFN-FCRLF (VBN) 18 Ultra Librarian
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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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