제품 상세 정보

Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) 120 to -40
Number of full bridges 1 Vs (min) (V) 4.5 Vs ABS (max) (V) 70 Peak output current (A) 26 RDS(ON) (HS + LS) (mΩ) 85 Sleep current (µA) 5 Control mode Independent 1/2-Bridge, PH/EN, PWM Control interface Hardware (GPIO), SPI Features Current Regulation, Current sense Amplifier, Integrated Current Sensing, Open-Load Detection Rating Automotive TI functional safety category Functional Safety-Capable Operating temperature range (°C) 120 to -40
VQFN-HR (VAK) 15 21 mm² 3.5 x 6

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 29A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI
  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection
    • Over temperature warning (SPI only)

    • Over temperature protection
    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Functional Safety-Capable

    • Documentation available to aid functional safety system design
  • 4.5V to 65V (70V abs. max) operating range
  • MOSFET ON resistance (HS + LS): 85mΩ
  • Maximum output current = 29A
  • Configurable control modes
    • Single full-bridge, PH/EN, or PWM interface
    • Two half-bridges using Independent mode
  • 2 Interface options - HW or SPI
  • PWM frequency operation up to 100kHz with automatic dead time assertion
  • Configurable slew rate and spread spectrum clocking for low electromagnetic interference (EMI)
  • Integrated current sense (eliminates shunt resistor)
  • Proportional load current output on IPROPI
  • Die temperature monitoring on IPROPI (SPI only)

  • Configurable current regulation
  • Protection and diagnostic features with configurable fault reaction (latched or retry)
    • Load diagnostics in both the off-state and on-state to detect open load and short circuit
    • Voltage monitoring on supply (VM)
    • Over current protection
    • Over temperature warning (SPI only)

    • Over temperature protection
    • Powered off Braking

    • Fault indication on nFAULT pin
  • Supports 1.8V, 3.3V, 5V logic inputs
  • Low sleep current - 7µA typical at 25°C
  • Device family comparison table

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. It is available in two variants: HW interface and SPI interface. The SPI variant offers more flexibility in device configuration and fault observability.

The DRV8263-Q1 is a wide-voltage, high-power fully integrated H-bridge driver for 24V and 48V automotive applications. Designed in a BiCMOS high-power process technology node, this device in a power package offers excellent power handling and thermal capability while providing compact package size, ease of layout, EMI control, accurate current sense, robustness, and diagnostic capability.

The device integrates a N-channel H-bridge, charge pump, high-side current sensing with regulation, current proportional output, and protection circuitry. The integrated sensing uses a current mirror, removing the need for shunt resistors, saving board area, and reducing system cost. A low-power sleep mode is provided to achieve low quiescent current.

The device offers voltage monitoring and load diagnostics, as well as protection features against overcurrent and overtemperature. Fault conditions are indicated on the nFAULT pin. It is available in two variants: HW interface and SPI interface. The SPI variant offers more flexibility in device configuration and fault observability.

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* Data sheet DRV8263-Q1 Automotive 65V H-Bridge Driver with Integrated Current Sense and Diagnostics datasheet PDF | HTML 2025/01/22

설계 및 개발

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평가 보드

DRV8263H-Q1EVM — 브러시드 DC 모터 드라이버의 하드웨어 변형에 대한 DRV8263-Q1 평가 모듈

DRV8263H-Q1 평가 모듈(EVM)은 DRV8263H HotRod™ 패키지의 기능과 성능을 입증합니다. DRV8263H-Q1은 광범위한 자동차 애플리케이션을 위해 설계된 완전 통합 하프 브리지 드라이버입니다. H 브리지 드라이버는 4.5V~65V의 작동 전압 및 26A 최대 출력 전류를 가진 고전류 애플리케이션용으로 제작되었습니다.
사용 설명서: PDF | HTML
TI.com에서 구매 불가
평가 보드

DRV8263S-Q1EVM — 브러시드 DC 모터 드라이버의 SPI 변형에 대한 DRV8263-Q1평가 모듈

DRV8263S-Q1 평가 모듈(EVM)은 DRV8263S HotRod™ 패키지의 기능과 성능을 입증합니다. DRV8263S-Q1은 광범위한 자동차 애플리케이션을 위해 설계된 완전 통합 하프 브리지 드라이버입니다. H 브리지 드라이버는 4.5V~65V의 작동 전압 및 26A 최대 출력 전류를 가진 고전류 애플리케이션용으로 제작되었습니다.

사용 설명서: PDF | HTML
TI.com에서 구매 불가
패키지 CAD 기호, 풋프린트 및 3D 모델
VQFN-HR (VAK) 15 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
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  • 팹 위치
  • 조립 위치

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