신규

JFE2325

Name: JFE2325
Brand: TI
SKU: JFE2325
Price: 0.2 USD

활성

30V N-channel JFET matched-pair transistor with self-biased gates for electret condenser microphones

지금 주문하기

데이터 시트

document-pdfAcrobat JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A) (영어) PDF | HTML

JFE2325

활성

데이터 시트

지금 주문하기

제품 상세 정보

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

VGSTH typ (typ) (V)

-1

Rating

Catalog

Operating temperature range (°C)

-40 to 125

Vn at 1 kHz (nV√Hz)

4.3

Breakdown voltage (V)

30

VDS (V)

30

VGS (V)

5

VGSTH typ (typ) (V)

-1

Rating

Catalog

Operating temperature range (°C)

-40 to 125

X2SON (DTQ)

6

0.8 mm² 1 x 0.8

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

Monolithic, matched, N-Channel JFETs
Self-biased gates for high input impedance (>400GOhm)
Low input capacitance: 0.85pF per JFET
Low noise: ˗110dBV(A-wt.) with 5pF input capacitance
Low VGS mismatch: 30mV (max)
Low IDSS mismatch: 5% (max)
High gate-to-drain breakdown voltage: 30V
Extremely Small Package: 0.8mm × 1mm X2SON

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

The JFE2325 is a monolithic, matched-pair discrete JFET intended for use with very high-impedance sensors such as electret condenser microphones (ECMs). The device consists of two N-channel JFETs, laid out for excellent matching on a single die. The gate of each JFET is biased by an integrated diode which allows for direct coupling of a signal source to the gate without the need for a biasing resistor. The JFE2325 achieves much higher input impedance (>400GOhm) than possible if discrete resistors were used to bias the gate. Furthermore, the JFE2325 features an extremely low input capacitance of 0.85pF per JFET which maximizes signal levels from transducers with extremely low output capacitance.

Each JFET is capable of 0.7mS of transconductance when configured to run at the full drain current of 385µA. The JFETs can be used individually, or in parallel for higher transconductance and lower noise.

The JFE2325 can withstand a high gate-to-drain voltage of 30V. The temperature range is specified from –40°C to +125°C.

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2개 모두 보기

상위 문서	유형	직함	형식 옵션	날짜
*	Data sheet	JFE2325 Dual, Low-Power, N-Channel JFET for Electret Microphones datasheet (Rev. A)	PDF \| HTML	2026/06/18
	EVM User's guide	JFE2325 Evaluation Module User's Guide	PDF \| HTML	2025/12/09