이 제품의 최신 버전이 있습니다
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.
LM5112-Q1
- LM5112-Q1 is Qualified for Automotive Applications
- AEC-Q100 Grade 1 Qualified
- Manufactured on an Automotive Grade Flow
- Compound CMOS and Bipolar Outputs Reduce Output Current Variation
- 7-A Sink and 3-A Source Current
- Fast Propagation Times: 25 ns (Typical)
- Fast Rise and Fall Times: 14 ns or 12 ns
Rise or Fall With 2-nF Load - Inverting and Non-Inverting Inputs Provide Either Configuration With a Single Device
- Supply Rail Undervoltage Lockout Protection
- Dedicated Input Ground (IN_REF) for
Split Supply or Single Supply Operation - Power Enhanced 6-Pin WSON Package
(3 mm × 3 mm) or Thermally Enhanced
MSOP-PowerPAD Package - Output Swings From VCC to VEE Which Are Negative Relative to Input Ground
The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
관심 가지실만한 유사 제품
다른 핀 출력을 지원하지만 비교 대상 장치와 동일한 기능.
기술 자료
| 상위 문서 | 유형 | 직함 | 형식 옵션 | 최신 영어 버전 다운로드 | 날짜 |
|---|---|---|---|---|---|
| * | 데이터 시트 | LM5112, LM5112-Q1 Tiny 7-A MOSFET Gate Driver datasheet (Rev. C) | PDF | HTML | 2015. 10. 22 | |
| 애플리케이션 노트 | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024. 1. 22 | ||
| 애플리케이션 노트 | Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) | PDF | HTML | 2023. 9. 8 | ||
| 애플리케이션 노트 | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021. 11. 10 | ||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020. 2. 28 | |||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020. 2. 28 | |||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019. 1. 18 | |||
| 추가 자료 | Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) | 2018. 10. 29 | |||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018. 3. 16 | |||
| 애플리케이션 노트 | An Alternative Approach to Higher-Power Boost Converters | 2009. 11. 30 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| WSON (NGG) | 6 | Ultra Librarian |
주문 및 품질
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.