LMG3100R017
- Integrated 1.7mΩ GaN FET and driver
- Interated high-side level shift and bootstrap
- Two LGM3100 can form a half-bridge
- No external level shifter needed
- 90V continuous, 100V pulsed voltage rating
- Package optimized for easy PCB layout
- 5V external bias power supply
- Supports 3.3V and 5V input logic levels
- High slew rate switching with low ringing
- Gate driver capable of up to 10MHz switching
- Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
- Supply rail undervoltage lockout protection
- Excellent propagation delay (29.5ns typical) and matching (12ns typical)
- Low power consumption
- Exposed top QFN package for connection to heatsink
The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.
GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.
The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.
The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.
기술 문서
유형 | 직함 | 날짜 | ||
---|---|---|---|---|
* | Data sheet | LMG3100R017 100V, 97A GaN FET With Integrated Driver datasheet | PDF | HTML | 2024/01/23 |
Technical article | GaN이 전자 설계를 혁신하는 4가지 중전압 애플리케이션 | PDF | HTML | 2024/02/20 |
설계 및 개발
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LMG3100EVM-089 — LMG3100 평가 모듈
PMP23392 — 48V 오토모티브 애플리케이션용 GaN FET를 사용하는 듀얼 위상 벅 컨버터 레퍼런스 설계
패키지 | 핀 | 다운로드 |
---|---|---|
UNKNOWN (VBE) | 15 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치