LMH9235

활성

발룬 기능이 통합된 3.3V~4.2GHz 단일 종단-차동 증폭기

제품 상세 정보

Type Active Balun Frequency (min) (MHz) 3300 Frequency (max) (MHz) 4200 Gain (typ) (dB) 17.5 Noise figure (typ) (dB) 3 OIP3 (typ) (dBm) 34.5 P1dB (typ) (dBm) 18 Frequency of harmonic distortion measurement (GHz) 3.5 Supply voltage (V) 3.3 Current consumption (mA) 80 Number of channels 1 Operating temperature range (°C) -40 to 105 Rating Catalog Output enable Yes
Type Active Balun Frequency (min) (MHz) 3300 Frequency (max) (MHz) 4200 Gain (typ) (dB) 17.5 Noise figure (typ) (dB) 3 OIP3 (typ) (dBm) 34.5 P1dB (typ) (dBm) 18 Frequency of harmonic distortion measurement (GHz) 3.5 Supply voltage (V) 3.3 Current consumption (mA) 80 Number of channels 1 Operating temperature range (°C) -40 to 105 Rating Catalog Output enable Yes
WQFN (RRL) 12 4 mm² 2 x 2
  • Single-channel, single-ended input to differential output RF gain block amplifier
  • Supports 3.3 GHz – 3.8 GHz band directly or 3.7 GHz – 4.2 GHz band with external matching components
  • 17.5 dB typical gain across the band
  • Less than 3 dB noise figure
  • 34.5 dBm OIP3
  • 18 dBm output P1 dB
  • 270 mW power consumption on 3.3 V single supply
  • Up to 105°C TC operating temperature
  • Single-channel, single-ended input to differential output RF gain block amplifier
  • Supports 3.3 GHz – 3.8 GHz band directly or 3.7 GHz – 4.2 GHz band with external matching components
  • 17.5 dB typical gain across the band
  • Less than 3 dB noise figure
  • 34.5 dBm OIP3
  • 18 dBm output P1 dB
  • 270 mW power consumption on 3.3 V single supply
  • Up to 105°C TC operating temperature

The LMH9235 device is a high-performance, single-channel, single-ended input to differential output receive RF gain block amplifier supporting 3.6 GHz center frequency band. The device is well suited to support requirements for the next generation 5G AAS or small cell applications where LNA gain is not sufficient to drive full-scale of an analog front-end (AFE). The RF amplifier provides 17 dB typical gain with good linearity performance of 34 dBm Output IP3, while maintaining about 3 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 50 Ω impedance at both the single-ended input as well as the differential output providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE).

Operating on a single 3.3 V supply, the device consumes about 270 mW of active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8 V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

The LMH9235 device is a high-performance, single-channel, single-ended input to differential output receive RF gain block amplifier supporting 3.6 GHz center frequency band. The device is well suited to support requirements for the next generation 5G AAS or small cell applications where LNA gain is not sufficient to drive full-scale of an analog front-end (AFE). The RF amplifier provides 17 dB typical gain with good linearity performance of 34 dBm Output IP3, while maintaining about 3 dB noise figure across the whole 1 dB bandwidth. The device is internally matched for 50 Ω impedance at both the single-ended input as well as the differential output providing easy interface with an RF-sampling or Zero-IF analog front-end (AFE).

Operating on a single 3.3 V supply, the device consumes about 270 mW of active power making it suitable for high-density 5G massive MIMO applications. Also, the device is available in a space saving 2 mm x 2 mm, 12-pin QFN package. The device is rated for an operating temperature of up to 105°C to provide a robust system design. There is a 1.8 V JEDEC compliant power down pin available for fast power down and power up of the device suitable for time division duplex (TDD) systems.

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기술 자료

star =TI에서 선정한 이 제품의 인기 문서
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3개 모두 보기
유형 직함 날짜
* Data sheet LMH9235 3.3 GHz – 4.2 GHz Single-Ended to Differential Amplifier with Integrated Balun datasheet (Rev. C) PDF | HTML 2021/05/06
EVM User's guide LMH9235 Evaluation Module User's Guide 2020/05/05
Certificate LMH9235RRLEVM EU Declaration of Conformity (DoC) 2020/04/14

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

평가 보드

AFE79-LMH9-EVM — 액티브 발룬 LMH9126, LMH9226, LMH9135 및 LMH9235가 포함된 AFE7920 레퍼런스 디자인 평가 보드

AFE79-LMH9-EVM 평가 모듈(EVM)은 액티브 발룬 LMH9xxx 제품군과 상호 작용하는 통합 RF 샘플링 트랜시버 AFE79xx 제품군의 성능을 평가하는 보드입니다. AFE79-LMH9-EVM은 AFE7920, LMH9126, LMH9226, LMH9135 및 LMH9235를 보여줍니다. 이 장치는 트랜시버의 출력을 상호 작용시키고 PA(전력 증폭기) 입력을 구동하는 동시에 차세대 5G 대규모 MIMO 능동 안테나 시스템의 요구 사항을 지원하는 데 적합합니다. 기본적으로 이 보드는 50Ω 테스트 장비와의 간편한 (...)
사용 설명서: PDF
시뮬레이션 모델

LMH9235 S-Parameter Models

SBOMB72.ZIP (5 KB) - S-Parameter Model
패키지 CAD 기호, 풋프린트 및 3D 모델
WQFN (RRL) 12 Ultra Librarian

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.

지원 및 교육

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