홈 스위치 및 멀티플렉서 아날로그 스위치 및 멀티플렉서 프로토콜/버스 스위치 및 멀티플렉서
홈
스위치 및 멀티플렉서
아날로그 스위치 및 멀티플렉서
프로토콜/버스 스위치 및 멀티플렉서

SN74CBT3383C

활성

-2V 언더슈트 보호 기능을 지원하는 5V, 크로스포인트/교환, 10채널 FET 버스 스위치

지금 주문
데이터 시트

SN74CBT3383C

활성
데이터 시트 지금 주문

제품 상세 정보

Protocols Analog Configuration Crosspoint/exchange Number of channels 10 Bandwidth (MHz) 200 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 8 CON (typ) (pF) 18.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
Protocols Analog Configuration Crosspoint/exchange Number of channels 10 Bandwidth (MHz) 200 Supply voltage (max) (V) 5.5 Ron (typ) (mΩ) 3000 Input/output voltage (min) (V) 0 Input/output voltage (max) (V) 5.5 Operating temperature range (°C) -40 to 85 ESD CDM (kV) 1 Input/output continuous current (max) (mA) 128 COFF (typ) (pF) 8 CON (typ) (pF) 18.5 OFF-state leakage current (max) (µA) 10 Ron (max) (mΩ) 12000 VIH (min) (V) 2 VIL (max) (V) 0.8 Rating Catalog
SOIC (DW) 24 159.65 mm² 15.5 x 10.3 SSOP (DBQ) 24 51.9 mm² 8.65 x 6 TSSOP (PW) 24 49.92 mm² 7.8 x 6.4
  • Undershoot protection for off-isolation on A and B ports up to −2 V
  • Bidirectional data flow, with near-zero propagation delay
  • Low on-state resistance (ron) characteristics (ron = 3 Ω typical)
  • Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 3 µA maximum)
  • VCC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
  • Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
  • ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
  • Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating
  • Undershoot protection for off-isolation on A and B ports up to −2 V
  • Bidirectional data flow, with near-zero propagation delay
  • Low on-state resistance (ron) characteristics (ron = 3 Ω typical)
  • Low input output capacitance minimizes loading and signal distortion (Cio (OFF) = 8 pF typical)
  • Data and control inputs provide undershoot clamp diodes
  • Low power consumption (ICC = 3 µA maximum)
  • VCC operating range from 4 V to 5.5 V data I/Os support 0 to 5-V signaling levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, and 5-V)
  • Control inputs can be driven by TTL or 5-V/3.3-V CMOS outputs
  • Ioff supports partial-power-down mode operation
  • Latch-up performance exceeds 100 mA per JESD 78, Class II
  • ESD performance tested per JESD 22− 2000-V Human-Body Model (A114-B, Class II)− 1000-V Charged-Device Model (C101)
  • Supports both digital and analog applications: PCI interface, memory interleaving, bus isolation, low-distortion signal gating

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN74CBT3383C is a high-speed TTL-compatible FET bus-exchange switch with low ON-state resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B ports of the SN74CBT3383C provides protection for undershoot up to −2 V by sensing an undershoot event and ensuring that the switch remains in the proper OFF state.

The SN74CBT3383C is organized as a 10-bit bus switch, or as a 5-bit bus-exchange switch with a single output-enable (BE) input that provides data exchanging between four signal ports. The select (BX) input controls the data path of the bus-exchange switch. When BE is low, the A port is connected to the B port, allowing bidirectional data flow between ports. When BE is high, a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, BE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
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기술 자료

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13개 모두 보기
유형 직함 날짜
* Data sheet SN74CBT3383C 10-Bit FET Bus-Exchange Switch 5-V Bus SwitchWith −2-V Undershoot Protection datasheet (Rev. A) PDF | HTML 2022/12/02
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 2022/06/02
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 2021/12/01
Application note CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) PDF | HTML 2021/11/19
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 2021/01/06
Selection guide Little Logic Guide 2018 (Rev. G) 2018/07/06
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 2015/12/02
User guide LOGIC Pocket Data Book (Rev. B) 2007/01/16
More literature Digital Bus Switch Selection Guide (Rev. A) 2004/11/10
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 2004/07/08
User guide Signal Switch Data Book (Rev. A) 2003/11/14
Application note Bus FET Switch Solutions for Live Insertion Applications 2003/02/07
Selection guide Logic Guide (Rev. AC) PDF | HTML 1994/06/01

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주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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