TPS54116-Q1
- AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM ESD Classification Level 2
- Device CDM ESD Classification Level C6
- Single-chip DDR2, DDR3 and DDR3L Memory Power Solution
- 4-A Synchronous Buck Converter
- Integrated 33-mΩ High-side and 25-mΩ Low-side MOSFETs
- Fixed Frequency Current-mode Control
- Adjustable Frequency from 100 kHz to 2.5 MHz
- Synchronizable to an External Clock
- 0.6-V ±1% Voltage Reference Over Temperature
- Adjustable Cycle-by-Cycle Peak Current Limit
- Monotonic Start-up Into Pre-biased Outputs
- 1-A Source/Sink Termination LDO with ±20-mV DC Accuracy
- Stable with 2 × 10-µF MLCC Capacitor
- 10-mA Source/Sink Buffered Reference Output Regulated to Within 49% to 51% of VDDQ
- Independent Enable Pins with Adjustable UVLO and Hysteresis
- Thermal Shutdown
- –40°C to 150°C Operating TJ
- 24-pin, 4-mm × 4-mm WQFN Package
The TPS54116-Q1 device is a full featured 6-V, 4-A, synchronous step down converter with two integrated MOSFETs and 1-A sink/source double data rate (DDR) VTT termination regulator with VTTREF buffered reference output.
The TPS54116-Q1 buck regulator minimizes solution size by integrating the MOSFETs and reducing inductor size with up to 2.5-MHz switching frequency. The switching frequency can be set above the medium wave radio band for noise sensitive applications and is synchronizable to an external clock. Synchronous rectification keeps the frequency fixed across the entire output load range. Efficiency is maximized through integrated 25-mΩ low-side and 33-mΩ high-side MOSFETs. Cycle-by-cycle peak current limit protects the device during an overcurrent condition and is adjustable with a resistor at the ILIM pin to optimize for smaller inductors.
The VTT termination regulator maintains fast transient response with only 2 × 10-µF ceramic output capacitance reducing external component count. The TPS54116-Q1 uses remote sensing of VTT for best regulation.
Using the enable pins to enter a shutdown mode reduces supply current to 1-µA. Under voltage lockout thresholds can be set with a resistor network on either enable pin. The VTT and VTTREF outputs are discharged when disabled with ENLDO.
Full integration minimizes the IC footprint with a small 4 mm × 4 mm thermally enhanced WQFN package.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPS54116-Q1 2.95-V to 6-V Input, 4-A Step-Down Converter and 1-A Source/Sink DDR Termination Regulator datasheet (Rev. B) | PDF | HTML | 2016/10/17 |
| User guide | Single LP8733-Q1 User's Guide to Power DRA78x and TDA3 (Rev. A) | PDF | HTML | 2021/03/31 | |
| Application note | DDR VTT Power Solutions: A Competitive Analysis (Rev. A) | 2020/07/09 | ||
| Technical article | Improving DDR Memory Performance in Automotive Applications | PDF | HTML | 2017/06/22 | |
| Technical article | Four design tips to obtain 2MHz switching frequency | PDF | HTML | 2016/10/03 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TPS54116-Q1EVM-830 — TPS54116-Q1 오토모티브 DDR 전원 솔루션 평가 모듈
이 평가 모듈은 TPS54116-Q1 레귤레이터를 사용하여 설계할 때 달성할 수 있는 작은 인쇄 회로 보드 영역을 시연하기 위해 설계되었습니다. 외부 분배기를 통해 출력 전압을 조정할 수 있습니다. TPS54116-Q1 DC/DC 컨버터는 DDR 메모리 종단을 위한 통합 1A 소스/싱크 LDO와 함께 최대 4A 출력을 제공하도록 설계된 동기 벅 컨버터입니다.
TIDA-00530 — 저전력 TDA3x 기반 시스템을 위한 차량용 전원 레퍼런스 디자인
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| WQFN (RTW) | 24 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.