TPS7H5020-SP
- Radiation performance:
- Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 14V maximum input voltage for both controller and driver stages
- Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
- 1.2A peak source and sink capability at 12V
- Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
- Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
- 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
- Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
- External clock synchronization capability
- Adjustable slope compensation and soft start
- Plastic packages outgas tested per ASTM E595
- Available in military temperature range (–55°C to 125°C)
The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.
The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. B) | PDF | HTML | 2026/02/11 |
| * | Radiation & reliability report | TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report | 2025/09/03 | |
| * | Radiation & reliability report | TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization | 2025/09/02 | |
| * | Radiation & reliability report | Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP | PDF | HTML | 2025/08/18 |
| Selection guide | TI Space Products (Rev. K) | 2025/04/04 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TPS7H5020EVM — TPS7H5020-SP 평가 모듈
TPS7H5020FLYEVM — TPS7H5020-SEP 및 QMLP 플라이백 평가 모듈
TPS7H5020FLYEVM은 플라이백 컨버터 토폴로지에서 GaN FET 스위칭 요소를 구동하는 TPS7H5020-SEP PWM 컨트롤러의 작동을 보여줍니다. 이 EVM은 사용자 지정 구성을 테스트할 수 있는 유연성을 제공합니다. 간편한 장치 구성과 성능 검증을 위해 테스트 지점 및 추가 부품 풋프린트가 제공됩니다.
PMP23598 — 우주 애플리케이션을 위한 75W 동기 포워드 컨버터 참조 설계
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| HTSSOP (PWP) | 24 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.