TPS7H5020-SP
- Radiation performance:
- Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
- Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
- Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
- 4.5V to 14V input voltage range for both controller and driver stages
- Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
- 1.2A peak source and sink capability at 12V
- Optional connection of VLDO linear regulator output to PVIN for driving GaN
- Programmable linear regulator (VLDO) from 4.5V to 5.5V
- 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
- Switching frequency from 100kHz to 1MHz
- External clock synchronization capability
- Adjustable slope compensation and soft start
- Plastic packages outgas tested per ASTM E595
The TPS7H502x is a radiation-hardened, current mode, single-ended PWM controller with an integrated gate driver that can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs. The TPS7H502x integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controller also features a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.
The TPS7H502x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The device is capable of switching at frequencies up to 1MHz. The driver stage for the controller has a wide input voltage range from 4.5V to 14V and supports peak source and sink currents up to 1.2A. The programmable regulator, VLDO, can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 device has a maximum duty cycle of 100% while the TPS7H5021 has a 50% maximum duty cycle. The controller supports numerous power converter topologies, including flyback, forward, and boost.
기술 자료
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | TPS7H502x-SP and TPS7H502x-SEP Radiation-Hardened 1MHz Current Mode PWM Controller With Integrated Gate Driver datasheet (Rev. A) | PDF | HTML | 2025/09/15 |
| * | Radiation & reliability report | TPS7H5020-SP QMLP Total Ionizing Dose (TID) Report | 2025/09/03 | |
| * | Radiation & reliability report | TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization | 2025/09/02 | |
| * | Radiation & reliability report | Single-Event Effects (SEE) Radiation Report of the TPS7H502X-SP | PDF | HTML | 2025/08/18 |
| Selection guide | TI Space Products (Rev. K) | 2025/04/04 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
TPS7H5020EVM — TPS7H5020-SP 평가 모듈
TPS7H5020FLYEVM — TPS7H5020-SEP 및 QMLP 플라이백 평가 모듈
TPS7H5020FLYEVM은 플라이백 컨버터 토폴로지에서 GaN FET 스위칭 요소를 구동하는 TPS7H5020-SEP PWM 컨트롤러의 작동을 보여줍니다. 이 EVM은 사용자 지정 구성을 테스트할 수 있는 유연성을 제공합니다. 간편한 장치 구성과 성능 검증을 위해 테스트 지점 및 추가 부품 풋프린트가 제공됩니다.
PMP23598 — 우주 애플리케이션을 위한 75W 동기 포워드 컨버터 참조 설계
| 패키지 | 핀 | CAD 기호, 풋프린트 및 3D 모델 |
|---|---|---|
| HTSSOP (PWP) | 24 | Ultra Librarian |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.