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ISO5451

現行

具有主動保護功能的 5.7kVrms、2.5A/5A 單通道絕緣式閘極驅動器

產品詳細資料

Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Power switch IGBT, MOSFET Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 1000 Transient isolation voltage (VIOTM) (VPK) 8000 Peak output current (A) 5 Peak output current (source) (typ) (A) 2.5 Peak output current (sink) (typ) (A) 5 Features Active miller clamp, Fault reporting, Power good, Short circuit protection Output VCC/VDD (min) (V) 15 Output VCC/VDD (max) (V) 30 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Propagation delay time (µs) 0.076 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Catalog Bootstrap supply voltage (max) (V) 1420 Rise time (ns) 18 Fall time (ns) 20 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification
  • 50-kV/µs Minimum and 100-kV/µs Typical Common-Mode Transient Immunity (CMTI) at V CM = 1500 V
  • 2.5-A Peak Source and 5-A Peak Sink Currents
  • Short Propagation Delay: 76 ns (Typ), 110 ns (Max)
  • 2-A Active Miller Clamp
  • Output Short-Circuit Clamp
  • Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
  • Input and Output Under Voltage Lock-Out (UVLO) with Ready (RDY) Pin Indication
  • Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
  • 3-V to 5.5-V Input Supply Voltage
  • 15-V to 30-V Output Driver Supply Voltage
  • CMOS Compatible Inputs
  • Rejects Input Pulses and Noise Transients Shorter Than 20 ns
  • Operating Temperature: –40°C to +125°C Ambient
  • Isolation Surge Withstand Voltage 10000-V PK
  • Safety-Related Certifications:
    • 8000-V PK V IOTM and 1420-V PK V IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
    • 5700-V RMS Isolation for 1 Minute per UL 1577
    • CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
    • TUV Certification per EN 61010-1 and EN 60950-1
    • GB4943.1-2011 CQC Certification

The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

The ISO5451 is a 5.7-kV RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path, preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low, otherwise this output is high.

The ISO5451 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

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類型 標題 日期
* Data sheet ISO5451 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. D) PDF | HTML 2023年 5月 30日
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. Y) 2025年 9月 22日
Certificate UL Certificate of Compliance File E181974 Vol 4 Sec 6 (Rev. R) 2025年 9月 8日
Certificate TUV Certificate for Isolation Devices (Rev. L) 2025年 8月 15日
Application brief Does My Design Need a Miller Clamp? PDF | HTML 2024年 12月 11日
Application note Choosing Appropriate Protection Approach for IGBT and SiC Power Modules PDF | HTML 2024年 7月 19日
Certificate ISO5x5x CQC Certificate of Product Certification 2023年 11月 7日
Application note Digital Isolator Design Guide (Rev. G) PDF | HTML 2023年 9月 13日
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 2023年 9月 1日
White paper Circuit Board Insulation Design According to IEC60664 for Motor Drive Apps PDF | HTML 2023年 8月 31日
Certificate ISO5451 CQC Certificate of Product Certification 2023年 8月 16日
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 2021年 12月 16日
Certificate CSA Certification (Rev. Q) 2021年 6月 14日
Application brief External Gate Resistor Selection Guide (Rev. A) 2020年 2月 28日
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 2020年 2月 28日
E-book E-book: An engineer’s guide to industrial robot designs 2020年 2月 12日
Functional safety information Isolation in AC Motor Drives: Understanding the IEC 61800-5-1 Safety Standard (Rev. A) 2019年 9月 19日
Analog Design Journal Pushing the envelope with high-performance digital-isolation technology (Rev. A) 2018年 8月 22日
White paper Demystifying high-voltage power electronics for solar inverters 2018年 6月 6日
Functional safety information Isolation in solar power converters: Understanding the IEC62109-1 safety standar (Rev. A) 2018年 5月 18日
Analog Design Journal 4Q 2015 Analog Applications Journal 2015年 10月 30日
Technical article What you can do with a high-CMTI isolator PDF | HTML 2015年 10月 1日
Technical article Isolators as insulators: using isolation for electrical safety PDF | HTML 2015年 8月 25日
White paper Understanding electromagnetic compliance tests in digital isolators 2014年 10月 17日
White paper High-voltage reinforced isolation: Definitions and test methodologies 2014年 10月 16日
Application note Shelf-Life Evaluation of Lead-Free Component Finishes 2004年 5月 24日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

ISO5851EVM — ISO5851 評估模組 (EVM)

This evaluation module, featuring ISO5851 reinforced isolated gate driver device, allows designers to evaluate device AC and DC performance with a pre-populated 1-nF load or with a user-installed IGBT in either of the standard TO-247 or TO-220 packages.

使用指南: PDF
TI.com 無法提供
模擬型號

ISO5451 PSPICE Unencrypted Model

SLLM448.ZIP (3 KB) - PSpice Model
模擬型號

ISO5451 PSpice Transient Model

SLLM299.ZIP (83 KB) - PSpice Model
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一,涵蓋我們的類比和電源產品組合,以及特定類比行為模型,且使用無需支付費用。

PSpice for TI 設計和模擬環境可讓您使用其內建函式庫來模擬複雜的混合訊號設計。在進行佈局和製造之前,建立完整的終端設備設計和解決方案原型,進而縮短上市時間並降低開發成本。 

在 PSpice for TI 設計與模擬工具中,您可以搜尋 TI (...)
參考設計

TIDA-00638 — 具有主動米勒鉗位且適用於太陽能逆變器的隔離式閘極驅動器功率級參考設計

此參考設計包含一個單一模組,配備強化隔離式 IGBT 閘極驅動器與專用的閘極驅動電源供應器。這項精巧的參考設計可控制太陽能逆變器中的 IGBT。  此設計採用強化隔離式 IGBT 閘極驅動器,內建 IGBT DESAT 偵測與米勒箝位保護,能夠使用單極供應電壓來驅動閘極。每個閘極驅動器所使用的開迴路推拉式拓撲架構電源供應器皆可為 PCB 佈線提供更大的彈性。本設計所採用的推拉式變壓驅動器運作頻率為 420kHz,有助於縮小隔離變壓器的體積,打造小巧的電源供應器。模組的針腳配置與我們的太陽能逆變器平台相容,可用於測試,也可作為獨立驅動器使用。
Design guide: PDF
電路圖: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SOIC (DW) 16 Ultra Librarian

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