產品詳細資料

Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
Rating Catalog Integrated isolated power No Isolation rating Functional Number of channels 2 Forward/reverse channels 1 forward / 1 reverse Default output High, Low Data rate (max) (Mbps) 50 CMTI (min) (V/µs) 100000 Operating temperature range (°C) -40 to 125 Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 1.71 Propagation delay time (typ) (µs) 0.011 Current consumption per channel (1 Mbps) (typ) (mA) 1.8 Creepage (min) (mm) 2.2 Clearance (min) (mm) 2.2
SOIC (D) 8 29.4 mm² 4.9 x 6 VSON (REU) 8 6 mm² 3 x 2
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 200VRMS, 280VDC working voltage
    • 570VRMS, 800VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options
  • Dual channel, CMOS output functional isolators
  • 50Mbps data rate
  • Robust SiO2 isolation barrier with ±150kV/µs typical CMTI
  • Functional Isolation (8-REU):
    • 200VRMS, 280VDC working voltage
    • 570VRMS, 800VDC transient voltage (60s)
  • Functional Isolation (8-D):
    • 450VRMS, 637VDC working voltage
    • 707VRMS, 1000VDC transient voltage (60s)
  • Available in a compact 8-REU package with >2.2mm creepage
  • Wide supply range: 1.71V to 1.89V and 2.25V to 5.5V
  • 1.71V to 5.5V level translation
  • Default output High (ISO652x) and Low (ISO652xF) Options
  • Wide temperature range: –40°C to 125°C
  • 1.8mA per channel typical at 1Mbps at 3.3V
  • Low propagation delay: 11ns typical at 3.3V
  • Robust electromagnetic compatibility (EMC)
    • System-Level ESD, EFT, and surge immunity
    • Ultra-low emissions
  • Leadless-DFN (8-REU) package and Narrow-SOIC (8-D) package options

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

The ISO652x devices are high-performance, dual-channel functional isolators designed for cost sensitive, space constrained applications that require isolation for non-safety applications. The isolation barrier supports a working voltage of 200VRMS / 280VDC and transient over voltages of 570VRMS / 800VDC.

The devices provide high electromagnetic immunity and low emissions at low power consumption, while isolating CMOS or LVCMOS digital I/Os. Each isolation channel has a logic input and output buffer separated by TI’s double capacitive silicon dioxide (SiO2) insulation barrier. ISO6520 has two isolation channels with both channels in the same direction. ISO6521 has two isolation channels with one channel in each direction. In the event of input power or signal loss, the default output is high for devices without suffix F and low for devices with suffix F. See Device Functional Modes section for further details.

These devices help prevent noise currents on data buses, such as UART, SPI, RS-485, RS-232, and CAN from damaging sensitive circuitry. Through chip design and layout techniques, the electromagnetic compatibility of the devices have been significantly enhanced to ease system-level ESD and emissions compliance.

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類型 標題 日期
* Data sheet ISO652x General Purpose Dual-Channel Functional Isolators datasheet (Rev. B) PDF | HTML 2024年 4月 10日
White paper Shrinking Solution Size and Cost With Functional Isolation PDF | HTML 2024年 8月 22日
Product overview Isolating UART Signals (Rev. A) PDF | HTML 2024年 6月 18日
Application brief Understanding Functional Isolation (Rev. A) PDF | HTML 2024年 1月 2日
EVM User's guide ISO652x Dual-Channel Functional Isolators Evaluation Module PDF | HTML 2023年 7月 25日

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ISO6521REUEVM — 適用數位訊號雙通道功能隔離器的 ISO6521 評估模組

ISO6521REUEVM 是一款評估模組 (EVM),用於評估採用 8 接腳 DFN 封裝的雙通道 ISO6521 功能隔離器。EVM 提供額外體積,讓使用者能夠靈活新增元件,以測試各種常見應用。EVM 也具備多個測試點,以透過最少外部元件來評估裝置。

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ISO6521 IBIS Model

SLLM505.ZIP (81 KB) - IBIS Model
參考設計

PMP23421 — 多相四開關降壓升壓 DC/DC 轉換器參考設計

此參考設計為數位控制、氮化鎵 (GaN) 架構的四開關降壓升壓 DC/DC 轉換器,用於電池備援 (BBU) 應用。此設計共有七個相位。以並聯方式連接六個相位以進行電池放電作業,可提供高達 8.1kW 的放電功率。第七個相位用於電池充電作業。轉換器可根據 VIN 和 VOUT 電壓,以降壓、降壓升壓或升壓模式運作,並且可在各模式間平穩轉換。
Test report: PDF
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SOIC (D) 8 Ultra Librarian
VSON (REU) 8 Ultra Librarian

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