LMG1208
- Dual floating gate driver
- 120V absolute maximum voltage on bootstrap supply (HB, LB) pins supporting 100V on the half-bridge
- 5A peak source and 6A peak sink current strength at 12V for silicon N-channel power FETs
- 3.5A peak source and 4.5A peak sink current strength at 5V for GaN FETs
- Wide supply operating voltage range: from 4.5V to 16V (18V absolute maximum)
- UVLO protection for VDD, HB-HS, and LB-LS supplies
- Single pulse width modulation (PWM) mode with resistor-programmable dead time
- Independent high-side (HS) and low-side (LS) logic inputs compatible with 3.3V and 5V logic levels
- Tri-state PWM input support
- Resistor programmable delay/dead time configuration in IIM and HSC modes
- Hybrid switched capacitor (HSC) converter mode support with integrated PWM logic
- Integrated low-offset high common-mode current sense amplifier
- Integrated synchronous bootstrap for floating high side driver supply
- Bootstrap control to prevent GaN FET overdrive
- 50V/ns dV/dt rating for all HS and LS referenced circuitry
- Switching parameters:
- Maximum propagation delay times: 30ns
- Maximum delay matching: 5ns
- Fully specified in –40°C to +150°C junction temperature range
- QFN-16 package (3mm × 3mm)
The LMG1208 is a robust floating half-bridge gate driver designed to drive two N-channel MOSFETs or enhancement mode GaN FETs with an absolute maximum bootstrap voltage of 120V. The device has 4.5A peak source and 5.5A peak sink current capability at 12V, allowing the LMG1208 to drive large power MOSFETs with minimized switching losses during the transition through the Miller Plateau. The switching nodes (HS, LS pins) can handle negative transient voltage, which protects the two floating domains from inherent negative voltages caused by parasitic inductance and stray capacitance.
The device, configured using a MODE pin, operates a variety of modes, such as independent input (IIM), single PWM, HSC_HS (hybrid switched-capacitor converter high side responder), HSC_LS (hybrid switched-capacitor converter low side responder), and HI LI inversion, giving the user complete flexibility to adopt the device in numerous topologies. The LMG1208 integrates a high-voltage high common mode support differential current sense amplifier with transconductance gain of 5uA/mV that can be used for inductor DCR or shunt based current sensing.
The PWM inputs support tri-state logic and can be interfaced to 3.3V PWM controllers independent of the operating supply voltage (5V or 12V). The low-side and high-side gate driver paths are matched to 5ns between the turn on and turn off of each other and are controlled through the EN/INL and PWM/INH input pins respectively. User can program the dead time in the range of 8ns to 100ns in single PWM mode using resistor to ground on DT pin. Same DT pin introduces rising edge delay on incoming PWM signals allowing dead time insertion in IIM mode and HSC modes as well. On-chip 120V rated bootstrap synchronous FET eliminates the need to add discrete bootstrap diode for HB domain. Bootstrap charging is controlled to prevent the gate voltage from exceeding the GaN FET maximum gate-to-source voltage rating. Device integrates robust level shifters from VDD to (LB-LS) and VDD to (HB-HS) domains. Undervoltage lockout (UVLO) is provided for VDD and for both the high-side (HB-HS) and the low-side (LB-LS) driver supply which forces the outputs low if the drive voltage is below the specified threshold.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMG1208 100V Dual Floating Gate Driver for MOSFET and GaN FET With Integrated Current Sense Amplifier datasheet | PDF | HTML | 2026/3/10 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| UNKNOWN (VEG) | 16 | Ultra Librarian |
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