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運算放大器 (op amps)
高速運算放大器 (GBW ≥ 50 MHz)

OPA657-DIE

現行

裸晶 1.6-GHz、低雜訊、FET 輸入運算放大器

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產品規格表

OPA657-DIE

現行
產品規格表 立即訂購

產品詳細資料

Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12 GBW (typ) (MHz) 1600 BW at Acl (MHz) 350 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 700 Vn at flatband (typ) (nV√Hz) 4.8 Vn at 1 kHz (typ) (nV√Hz) 7 Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 1.8 Rail-to-rail No Features Decompensated Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 89 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 2 Iout (typ) (mA) 70 2nd harmonic (dBc) 74 3rd harmonic (dBc) 106 Frequency of harmonic distortion measurement (MHz) 5
Architecture FET / CMOS Input, Voltage FB Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 12 GBW (typ) (MHz) 1600 BW at Acl (MHz) 350 Acl, min spec gain (V/V) 7 Slew rate (typ) (V/µs) 700 Vn at flatband (typ) (nV√Hz) 4.8 Vn at 1 kHz (typ) (nV√Hz) 7 Iq per channel (typ) (mA) 14 Vos (offset voltage at 25°C) (max) (mV) 1.8 Rail-to-rail No Features Decompensated Rating Catalog Operating temperature range (°C) -40 to 85 CMRR (typ) (dB) 89 Input bias current (max) (pA) 20 Offset drift (typ) (µV/°C) 2 Iout (typ) (mA) 70 2nd harmonic (dBc) 74 3rd harmonic (dBc) 106 Frequency of harmonic distortion measurement (MHz) 5
DIESALE (TD) — See data sheet
  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery
  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery

The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications.

The OPA657 device combines a high gain-bandwidth, low-distortion, voltage-feedback operational amplifier with a low voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision analog-to-digital converter (ADC) driving or wideband transimpedance applications. Photodiode applications achieve improved noise and bandwidth using this decompensated, high gain-bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. The very low input bias current and capacitance supports this performance even for relatively high source impedance. Broadband photodetector applications benefit from the low voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise, which makes the device ideal for high-gain photodiode applications.
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類型 標題 日期
* Data sheet OPA657-DIE 1.6-GHz, Low-Noise, FET-Input Operational Amplifier datasheet PDF | HTML 2016年 8月 10日

訂購與品質

內含資訊：
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  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊：
  • 晶圓廠位置
  • 組裝地點

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