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TMCS1126

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具有 AFR、參考和 ALERT 功能的 80ARMS、500kHz 霍爾效應電流感測器

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TMCS1126

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產品規格表 立即訂購

產品詳細資料

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 500000 Sensitivity error (%) 0.75 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 82 ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5000 VRMS
    • Reinforced working voltage: 1100 VDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity drift: ±20 ppm/°C
    • Offset error: ±0.2 mV
    • Offset drift: ±2 µV/°C
    • Non-linearity: ±0.1%
  • Low lifetime drift: ±0.5% (maximum)
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Signal bandwidth: 500 kHz
  • Low propagation delay: 95 ns
  • Fast overcurrent detection response: 100 ns
  • Operating supply range: 3 V to 5.5 V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • TMCS1126x6x: 15 mV/A
    • TMCS1126x1x: 25 mV/A
    • TMCS1126x7x: 30 mV/A
    • TMCS1126x9x: 33 mV/A
    • TMCS1126x8x: 40 mV/A
    • TMCS1126x2x: 50 mV/A
    • TMCS1126x3x: 75 mV/A
    • TMCS1126x4x: 100 mV/A
    • TMCS1126x5x: 150 mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.

The TMCS1126 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.45% maximum total error over temperature and lifetime with no system level calibration, or less than 1% maximum total error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±103A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5000VRMS, coupled with minimum 8.1 mm creepage and clearance provide up to 1100VDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection. TI provides the TMCS1126xxB as a lower-cost option.
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類型 標題 日期
* Data sheet TMCS1126 Precision 500kHz Hall-Effect Current Sensor With ±1100V Reinforced Isolation Working Voltage , Overcurrent Detection and Ambient Field Rejection datasheet PDF | HTML 2023年 11月 29日
Technical article 為更安全的太陽能系統和 EV 充電器提供準確的電流感測 PDF | HTML 2024年 4月 17日
EVM User's guide TMCS1126x Evaluation Module User's Guide PDF | HTML 2023年 11月 13日
Certificate TMCS1126AEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
Certificate TMCS1126BEVM EU Declaration of Conformity (DoC) 2023年 8月 21日
Certificate TMCS1126CEVM EU Declaration of Conformity (DoC) 2023年 8月 18日
Application brief Low-Drift, Precision, In-Line Isolated Magnetic Motor Current Measurements (Rev. A) 2023年 7月 24日

設計與開發

如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TMCS-A-ADAPTER-EVM — 適用於 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應電流感測器轉接卡 (不包括 IC)

TMCS-A-ADAPTER-EVM 是一款評估模組 (EVM)，旨在協助快速、便利地使用採用 DVG、DVF 或 DZP 封裝的 TMCS 隔離式霍爾效應精密電流感測監控器。此 EVM 可讓使用者在透過隔離層測量隔離輸出時，將高達 90A 的電流推經霍爾輸入側。TMCS-A-ADAPTER-EVM 包含一個未組裝的 PCB，其具備可安裝測試點和分接接頭針腳的位置，以評估裝置。PCB 焊盤是重疊的，因此任何 DVG、DVF 或 DZP TMCS 零件都可以搭配 TMCS-A-ADAPTER-EVM 使用。

使用指南: PDF | HTML
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開發板

TMCS1126EVM — 適用於隔離式霍爾效應電流感測的 TMCS1126 評估模組

TMCS1126EVM 是旨在協助方便快速使用 TMCS1126 的工具，而 TMCS1126 是使用內部參考的隔離式霍爾效應精密電流感測監控器。此評估模組可讓使用者將最大操作電流推經霍爾輸入側，同時透過強化型隔離層量測隔離輸出。此固定裝置配置不做為目標電路模型使用，且此固定裝置也不是為了電磁 (EMI) 測試而配置。TMCS1126EVM 包含單一印刷電路板，分為五個獨立部分，可讓使用者測試單一靜態點的所有靈敏度變化 (A = 0.5 Vs、B = 0.33 Vs 或 C = 0.1 Vs)。
使用指南: PDF | HTML
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參考設計

TIDA-010937 — 配備數位介面的隔離式低延遲高 PWM 抑制霍爾電流感測參考設計

此參考設計示範的準確低延遲強化隔離式雙向電流感測系統，使用了 TMCS1123 精密霍爾效應電流感測器，可實現可靠的相位電流與 DC 鏈路電流感測，並且具備最高達 ±62A 的三相逆變器，以及低於 100ns 的過電流偵測時間。過電流閾值最高可設定最高達全刻度輸入電流範圍的 2.5 倍。具備高速 SPI 的小型 12 位元 A/D 轉換器，或是時脈最達高 21 MHz 的 ΔΣ 調變器，可提供高雜訊抗擾度的 3.3V I/O 數位介面。介面可連接至 C2000 或 Sitara MCU 等主機處理器，輕鬆評估採用不同 A/D 轉換技術的封裝型霍爾感測器。 
Design guide: PDF
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