TPD1E1B04

現行

採用 0402 封裝且具有 6.3A 8/20uS 突波和低鉗位的 1pF、±3.6V、±30kV ESD 防護二極體

產品詳細資料

Package name DFN-1006 (X1SON) Peak pulse power (8/20 μs) (max) (W) 50 Vrwm (V) 3.6 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 1 Clamping voltage (V) 6.3 Breakdown voltage (min) (V) 6.4
Package name DFN-1006 (X1SON) Peak pulse power (8/20 μs) (max) (W) 50 Vrwm (V) 3.6 Bi-/uni-directional Bi-directional Number of channels 1 IO capacitance (typ) (pF) 1 Clamping voltage (V) 6.3 Breakdown voltage (min) (V) 6.4
X1SON (DPY) 2 0.6 mm² 1 x 0.6
  • IEC 61000-4-2 Level 4 ESD Protection
    • ±30-kV Contact Discharge
    • ±30-kV Air Gap Discharge
  • IEC 61000-4-4 EFT Protection
    • 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection
    • 6.3 A (8/20 µs)
  • IO Capacitance: 1 pF (Typical)
  • DC Breakdown Voltage: 6.4 V (Typical)
  • Low Leakage Current: 100 nA (Maximum)
  • Extremely Low ESD Clamping Voltage
    • 8.5 V at ±16-A TLP
    • RDYN: 0.15 Ω
  • Industrial Temperature Range: –40°C to +125°C
  • Industry Standard 0402 Package

All trademarks are the property of their respective owners.

  • IEC 61000-4-2 Level 4 ESD Protection
    • ±30-kV Contact Discharge
    • ±30-kV Air Gap Discharge
  • IEC 61000-4-4 EFT Protection
    • 80 A (5/50 ns)
  • IEC 61000-4-5 Surge Protection
    • 6.3 A (8/20 µs)
  • IO Capacitance: 1 pF (Typical)
  • DC Breakdown Voltage: 6.4 V (Typical)
  • Low Leakage Current: 100 nA (Maximum)
  • Extremely Low ESD Clamping Voltage
    • 8.5 V at ±16-A TLP
    • RDYN: 0.15 Ω
  • Industrial Temperature Range: –40°C to +125°C
  • Industry Standard 0402 Package

All trademarks are the property of their respective owners.

The TPD1E1B04 is a bidirectional TVS ESD protection diode featuring low RDYN and low clamping voltage. The TPD1E1B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).

The ultra-low dynamic resistance (0.15 Ω) and extremely low clamping voltage (8.5 V at 16-A TLP) ensure system level protection against transient events. This device features a 1-pF IO capacitance making it ideal for protecting interfaces such as USB 2.0.

The TPD1E1B04 is offered in the industry standard 0402 (DPY) package.

The TPD1E1B04 is a bidirectional TVS ESD protection diode featuring low RDYN and low clamping voltage. The TPD1E1B04 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).

The ultra-low dynamic resistance (0.15 Ω) and extremely low clamping voltage (8.5 V at 16-A TLP) ensure system level protection against transient events. This device features a 1-pF IO capacitance making it ideal for protecting interfaces such as USB 2.0.

The TPD1E1B04 is offered in the industry standard 0402 (DPY) package.

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類型 標題 日期
* Data sheet TPD1E1B04 1-Channel ESD Protection Diode with Low RDYN and Low Clamping Voltage datasheet (Rev. A) PDF | HTML 2016年 6月 10日
Application note ESD and Surge Protection for USB Interfaces (Rev. B) PDF | HTML 2024年 1月 11日
Selection guide System-Level ESD Protection Guide (Rev. D) 2022年 9月 7日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日
Technical article ESD Fundamentals Part 2: IEC 61000-4-2 Rating PDF | HTML 2017年 11月 28日
Technical article The dangers of deep snap-back ESD circuit-protection diodes PDF | HTML 2016年 9月 12日

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使用指南: PDF | HTML
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