TPD4E002

現行

四 11-pF、5.5-V、±15-kV ESD 防護二極體

產品詳細資料

Package name SOT-5X3 Peak pulse power (8/20 μs) (max) (W) 25 Vrwm (V) 5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 11 Clamping voltage (V) 30 Breakdown voltage (min) (V) 6.1
Package name SOT-5X3 Peak pulse power (8/20 μs) (max) (W) 25 Vrwm (V) 5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 11 Clamping voltage (V) 30 Breakdown voltage (min) (V) 6.1
SOT-5X3 (DRL) 5 2.56 mm² 1.6 x 1.6
  • IEC 61000-4-2 ESD Protection
    • ±15-kV IEC 61000-4-2 Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5-A Peak Pulse Current (8/20-µs Pulse)
  • ANSI/ESDA/JEDEC JS-001
    • ±15-kV Human Body Model (HBM)
  • Four Unidirectional Voltage Suppression Diodes for use in ESD Protection
  • I/O Breakdown Voltage, VBR = 6.1 V (Minimum)
  • I/O Capacitance 11 pF (Typical)
  • Low Leakage Current < 100 nA
  • Very Small Printed-Circuit Board (PCB) Area < 2.6 mm2
  • High Integration
  • Suitable for High-Density Boards
  • IEC 61000-4-2 ESD Protection
    • ±15-kV IEC 61000-4-2 Contact Discharge
  • IEC 61000-4-5 Surge Protection
    • 2.5-A Peak Pulse Current (8/20-µs Pulse)
  • ANSI/ESDA/JEDEC JS-001
    • ±15-kV Human Body Model (HBM)
  • Four Unidirectional Voltage Suppression Diodes for use in ESD Protection
  • I/O Breakdown Voltage, VBR = 6.1 V (Minimum)
  • I/O Capacitance 11 pF (Typical)
  • Low Leakage Current < 100 nA
  • Very Small Printed-Circuit Board (PCB) Area < 2.6 mm2
  • High Integration
  • Suitable for High-Density Boards

The TPD4E002 device is a transient voltage suppressor (TVS) designed to protect up to four lines against electrostatic discharge (ESD) transients. The monolithic circuit design allows superior capacitance matching between the channels and reduced crosstalk. This device is ideal for applications where both reduced line capacitance and board space-saving are required.

The TPD4E002 device is a transient voltage suppressor (TVS) designed to protect up to four lines against electrostatic discharge (ESD) transients. The monolithic circuit design allows superior capacitance matching between the channels and reduced crosstalk. This device is ideal for applications where both reduced line capacitance and board space-saving are required.

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類型 標題 日期
* Data sheet TPD4E002 Quad Low-Capacitance Array with ±15-kV ESD Protection datasheet (Rev. F) PDF | HTML 2016年 11月 18日
Application brief ESD Protection for GPIO PDF | HTML 2024年 1月 8日
Selection guide System-Level ESD Protection Guide (Rev. D) 2022年 9月 7日
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 2022年 8月 18日
White paper Designing USB for short-to-battery tolerance in automotive environments 2016年 2月 10日
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 2012年 9月 25日

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