首頁 電源管理 AC/DC 開關穩壓器 AC/DC controllers

TPS7H5020-SEP

現行

Radiation-tolerant, 100% duty cycle PWM controller for driving MOSFETs or GaN FETs

產品詳細資料

Topology Boost, Flyback, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
Topology Boost, Flyback, Forward Control mode Peak current mode Features External Sync, GaN support, MOSFET Gate Driver, Programmable Soft-start, Programmable slope compensation Duty cycle (max) (%) 100
HTSSOP (PWP) 24 49.92 mm² 7.8 x 6.4
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation hardness assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event latchup (SEL), single-event burnout (SEB) and single-event gate rupture (SEGR) immune to LET = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 14V maximum input voltage for both controller and driver stages
  • Dedicated gate driver voltage input pin (PVIN) allows for driving both silicon and GaN devices
    • 1.2A peak source and sink capability at 12V
    • Optional connection of VLDO linear regulator output to PVIN for driving GaN (TPS7H502x)
    • Programmable linear regulator (VLDO) from 4.5V to 5.5V (TPS7H502x)
  • 0.6V ±1% voltage reference over temperature, radiation, and line and load regulation
  • Switching frequency from 100kHz to 1MHz (TPS7H502x) or 100kHz to 500kHz (TPS7H503x)
  • External clock synchronization capability
  • Adjustable slope compensation and soft start
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

The TPS7H502x and TPS7H503x are a radiation-hardened, current mode, single-ended PWM controller with integrated gate drivers. The TPS7H502x can be utilized in both silicon and gallium nitride (GaN) power semiconductor based converter designs, while TPS7H503x is targeted toward silicon based converters. The controllers integrates several key functions, such as soft-start, enable, and adjustable slope compensation while maintaining a small package size. The controllers also feature a 0.6V ±1% voltage reference tolerance to support highly accurate power converter designs.

The TPS7H502x and TPS7H503x can be operated using an external clock through the SYNC pin or by programming the internal oscillator using the RT pin at a frequency determined by the user. The TPS7H502x device is capable of switching at frequencies up to 1MHz, while the TPS7H503x supports up to 500kHz operation. The driver stages for the controllers have a wide input voltage range and supports peak source and sink currents up to 1.2A. The TPS7H502x has a programmable regulator, VLDO, which can also be connected directly to the input of the driver stage (PVIN) to supply well-controlled gate voltage for operation with GaN FETs. The programmable regulator has a voltage range from 4.5V to 5.5V. The TPS7H5020 and TPS7H5030 devices have a maximum duty cycle of 100% while the TPS7H5021 and TPS7H5031 have a 50% maximum duty cycle. The controllers support numerous power converter topologies, including flyback, forward, and boost.

下載 觀看有字幕稿的影片 影片

技術文件

star =TI 所選的此產品重要文件
找不到結果。請清除您的搜尋條件,然後再試一次。
檢視所有 10
重要文件 類型 標題 格式選項 日期
* Data sheet TPS7H502x-SP/SEP and TPS7H503x-SP/SEP Radiation-Hardened Current Mode PWM Controllers With Integrated Gate Driver datasheet (Rev. C) PDF | HTML 2026年 2月 26日
* VID TPS7H5020-SEP VID TPS7H5020-SEP VID V62/25651 2026年 3月 4日
* Radiation & reliability report TPS7H5020-SEP and TPS7H5021-SEP Single-Event Effects (SEE) Report (Rev. A) PDF | HTML 2026年 2月 13日
* Radiation & reliability report TPS7H5020-SEP Production Flow and Reliability Report PDF | HTML 2025年 9月 10日
* Radiation & reliability report TPS7H5020-SEP Total Ionizing Dose Report 2025年 9月 5日
* Radiation & reliability report TPS7H5020-SEP and TPS7H5020-SP QMLP Neutron Displacement Damage (NDD) Characterization 2025年 9月 2日
Certificate TPS7H5020FLYEVM EU Declaration of Conformity (DoC) 2025年 6月 5日
Selection guide TI Space Products (Rev. K) 2025年 4月 4日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

TPS7H5020EVM — TPS7H5020-SP 評估模組

TPS7H5020EVM 展示了單一 TPS7H5020-SP 電流模式 PWM 控制器的運作情形,該控制器具有升壓配置中帶有 GaN FET 的整合式閘極驅動器。電路板提供可安裝額外元件的封裝與測試點,以便進行自訂配置測試與效能驗證。
使用指南: PDF | HTML
TI.com 無法提供
開發板

TPS7H5020FLYEVM — TPS7H5020-SEP 和 QMLP 返馳評估模組

TPS7H5020FLYEVM 展示了 TPS7H5020-SEP PWM 控制器在返馳轉換器拓樸結構中驅動 GaN FET 開關元件的操作。EVM 提供可測試自訂配置的彈性。提供測試點和額外元件體積,以簡化裝置配置與性能驗證。

使用指南: PDF | HTML
TI.com 無法提供
模擬型號

TPS7H502X SIMPLIS Model

SLVMEC6.ZIP (25 KB) - SIMPLIS Model
模擬型號

TPS7H502x PSpice Transient Model

SLVMEE9.ZIP (41 KB) - PSpice Model
參考設計

PMP23598 — 適合航太應用的 75-W 同步順向轉換器參考設計

此參考設計採用耐輻射 TPS7H5020-SEP 脈衝寬度調變 (PWM) 控制器和耐輻射 TPS7H6005-SEP 200V GaN 半橋閘極驅動器,可建立高效率的同步順向拓撲。若要取得準確、直接地感測輸出電壓並達到高迴路頻寬,需將 PWM 控制器置於二次側。半橋式閘極驅動器內的電容隔離 TX 和 RX 位準移位器,可將 PWM 波形從二次側傳輸至主要側,同時維持電氣隔離。
Test report: PDF
參考設計

PMP23546 — 適用於偏壓電源供應的 2.4W 多輸出 PSR 返馳參考設計

此參考設計使用 TPS7H5020-SEP 作為一次側穩壓 (PSR) 返馳式轉換器。輸入接受 22V 至 36V 範圍,以產生參考至主要接地的 12V 偏壓,以及可參考其他迴路的另一個 12V 輸出。此參考設計可用於為 PMP23391 等隔離式參考設計提供偏壓電源。在此設計中,控制器、半橋驅動器和 TI 氮化鎵場效電晶體 (FET) 的選擇是為了滿足地球同步軌道 (GEO) 的輻射需求。這些元件可換出以符合其他任務規格。
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
HTSSOP (PWP) 24 Ultra Librarian

訂購與品質

內含資訊:
  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。

支援與培訓

內含 TI 工程師技術支援的 TI E2E™ 論壇

內容係由 TI 和社群貢獻者依「現狀」提供,且不構成 TI 規範。檢視使用條款

若有關於品質、封裝或訂購 TI 產品的問題,請參閱 TI 支援。​​​​​​​​​​​​​​

影片