計算工具
TPSI2260X-Q1-HIPOT-RESISTANCE-CALC — TPSI2260x-Q1 HiPot Design Calculator
Spreadsheet calculator to help determine TPSI2260x-Q1 series resistance based on customer High Potential (HiPot) Withstand Test requirements.
TPSI2260-Q1
- Qualified for automotive applications
- AEC-Q100 grade 1: –40 to 125°C TA
- Low EMI
- Meets CISPR25 class 5 performance with no additional components
- Integrated avalanche rated MOSFETs
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- TPSI2260-Q1: IAVA = 1mA for 60s pulses
- TPSI2260C-Q1: IAVA = 0.6mA for 60s pulses
- TPSI2260T-Q1: IAVA = 3mA for 60s pulses
- 600V standoff voltage
- RON = 65Ω (TJ = 25°C)
- IOFF = 1.22µA at 500V (TJ = 105°C)
- Designed and qualified for reliability for dielectric withstand testing (Hi-Pot)
- Low primary side supply current
- 5mA ON state current
- 3.5µA OFF state current (TJ = 25°C)
- Functional Safety Capable
- Documentation available to aid in ISO 26262 and IEC 61508 system design
- Robust isolation barrier:
- > 30 year projected lifetime at 1500VRMS / 2120DC working voltage
- Reinforced isolation rating, VISO, up to 5000VRMS
- SOIC 11-pin (DWQ) package with wide pins for improved thermal performance
- Creepage and clearance ≥ 8mm (primary-secondary)
- Creepage and clearance ≥ 6mm (across switch terminals)
- Safety-Related Certifications
- (Planned) DIN EN IEC 60747-17 (VDE 0884-17)
- (Planned) UL 1577 component recognition program
The TPSI2260-Q1 is an isolated solid state relay designed for high voltage automotive and industrial applications. The TPSI2260-Q1 uses TI’s high reliability reinforced capacitive isolation technology in combination with internal back-to-back MOSFETs to form a completely integrated solution requiring no secondary side power supply. The TPSI2260-Q1 improves system reliability as TI’s capacitive isolation technology does not suffer from mechanical wearout or photo degradation failure modes common in mechanical relay and photo relay components.
The primary side of the device is powered by only 5mA of input current and incorporates a fail-safe EN pin preventing any possibility of back powering the VDD supply. In most applications, the VDD pin of the device must be connected to a system supply from between 4.5V to 20V and the EN pin of the device must be driven by a GPIO output with Logic high between 2.1V to 20V. In other applications, the VDD and EN pins can be driven together driven together directly from the system supply or from a GPIO output.
The secondary side consists of back-to-back MOSFETs with a standoff voltage of ±600V from S1 to S2. The TPSI2260-Q1 MOSFET avalanche robustness and thermally conscious package design allow it to robustly support system level dielectric withstand testing (HiPot) and DC fast charger surge currents of up to 1mA (0.6mA for TPSI2240C-Q1 and 3mA for TPSI2260T-Q1) without requiring any external components.
技術文件
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| 重要文件 | 類型 | 標題 | 格式選項 | 日期 |
|---|---|---|---|---|
| * | Data sheet | TPSI2260-Q1 600V, 50mA, Automotive Reinforced Solid-State Relay With Avalanche Protection datasheet (Rev. C) | PDF | HTML | 2026年 6月 12日 |
| Functional safety information | TPSI2260-Q1, TPSI2260C-Q1, and TPSI2260T-Q1 Functional Safety FIT Rate, FMD and Pin FMA (Rev. B) | PDF | HTML | 2026年 1月 26日 | |
| Certificate | TPSI2260Q1EVM EU Declaration of Conformity (DoC) | 2025年 1月 24日 |
設計與開發
如需其他條款或必要資源，請按一下下方的任何標題以檢視詳細頁面 (如有)。
開發板
TPSI2260Q1EVM — TPSI2260-Q1 評估模組
TPSI2260Q1EVM 是包含多個測試點和跳線的硬體評估模組 (EVM)，可全面評估裝置的性能與功能。此評估模組包含在將 TPSI2260-Q1 設計整合至更大應用的電源系統前，用於測試與評估此設計所需的所有項目。TPSI2260Q1EVM 可獨立使用，也可選擇搭配外部微控制器來驅動裝置的啟用訊號。可透過此 EVM 評估耐電壓測試（亦稱為高電位 [HiPot] 測試 HiPot）與直流快充突波電流等應用需求，無需額外的外部保護元件。此 EVM 採用 SOIC 封裝，並搭載 TPSI2260-Q1。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DWQ) | 11 | Ultra Librarian |
訂購與品質
內含資訊：
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中的可靠性監測
內含資訊：
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。