UCC21710
- 5.7-kV RMS single channel isolated gate driver
- Drives SiC MOSFETs and IGBTs up to 2121V pk
- 33-V maximum output drive voltage (VDD-VEE)
- ±10-A drive strength and split output
- 150-V/ns minimum CMTI
- 4-A internal active Miller clamp
- 400-mA soft turn-off under fault condition
- Isolated analog sensor with PWM output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40-ns noise transient and pulses on input pins
- 12-V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage Immunity up to 5 V
- 130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8 mm
- Operating junction temperature –40°C to 150°C
- Safety-related
certifications:
- Reinforced insulation per DIN EN IEC 60747-17(VDE 0884-17)
- UL 1577 component recognition program
The UCC21710 is a galvanically isolated single channel gate driver designed to drive up to 1700V SiC MOSFETs and IGBTs. It features advanced integrated protection, best-in-class dynamic performance, and robustness. UCC21710 has up to ±10-A peak source and sink current.
The input side is isolated from the output side with SiO 2 capacitive isolation technology, supporting up to 1.5-kV RMS working voltage with longer than 40 years isolation barrier life, 12.8-kV PK surge immunity, as well as providing low part-to-part skew , and >150V/ns common mode noise immunity (CMTI).
The UCC21710 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active Miller clamp, and input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers versatility and simplifying the system design effort, size and cost.
技術文件
設計與開發
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UCC21710QDWEVM-025 — 適用於 SiC 和 IGBT 電晶體和電源模組的驅動和保護評估板
UCC21710QDWEVM-054 — 適用 Wolfspeed® 1,200V SiC 平台的 UCC21710 評估模組
UCC21710QDWEVM-054 是精巧型半橋閘極驅動器評估模組,由兩個單通道及隔離式閘極驅動器組成。此評估模組針對數種不同 Wolfspeed® 碳化矽 (SiC) MOSFET 模組和離散式 SiC MOSFET,以及具備類似接腳配置的其他絕緣柵極雙極電晶體 (IGBT) 或 SiC MOSFET 模組,提供驅動所需的供應電壓、驅動、保護與監控功能。
SLURAZ2 — UCC217xxEVM Design Files
PMP23223 — 配備偏壓電源的智慧型隔離式閘極驅動器參考設計
此參考設計展示 UCC21732 柵極驅動器與 UCC14xxx 系列偏壓電源的組合。此設計可用於驅動各種電源開關,其中包括直接連接至 Wolfspeed 碳化矽 (SiC) 場效應電晶體 (FET) 模組。此參考設計也可做為高側或低側驅動器,或是可以用電容模擬負載進行測試。
UCC14240-Q1、UCC14141-Q1 和 UCC14341-Q1 皆屬於整合式偏壓電源的直接投入使用的替代產品,每個元件都具備不同的目標輸入電壓和輸出功率。
UCC14xxx-Q1 資訊:
- UCC14240-Q1
- 隔離:基本
- 輸入電壓 (V):24 (21 至 27)
- 輸出電壓 (V):25 (18 至 25)
- 功率輸出 (...)
TIDA-01606 — 11-kW、雙向三相三級 (T 型) 逆變器和 PFC 參考設計
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| SOIC (DW) | 16 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。