UCC27512-EP
- Low-Cost, Gate-Driver Device Offering Superior Replacement
of NPN and PNP Discrete Solutions - 4-A Peak Source and 8-A Peak Sink Asymmetrical Drive
- Strong Sink Current Offers Enhanced Immunity Against Miller Turn On
- Fast Propagation Delays (13-ns typical)
- Fast Rise and Fall Times (9-ns and 7-ns typical)
- 4.5-V to 18-V Single Supply Range
- Outputs Held Low During VDD UVLO (ensures glitch free operation at
power-up and power-down) - TTL and CMOS Compatible Input Logic Threshold,
(independent of supply voltage) - Hysteretic Logic Thresholds for High Noise Immunity
- Dual Input Design (choice of an inverting (IN- pin) or non-inverting
(IN+ pin) driver configuration)- Unused Input Pin can be Used for Enable or Disable Function
- Output Held Low when Input Pins are Floating
- Input Pin Absolute Maximum Voltage Levels Not Restricted by VDD Pin
Bias Supply Voltage - 6-Pin DRS (3mm × 3 mm WSON with exposed thermal pad) Package
Supports Defense, Aerospace, and Medical Applications
- Controlled Baseline
- One Assembly and Test Site
- One Fabrication Site
- Available in Military (–55°C to 125°C) Temperature Range
- Extended Product Life Cycle
- Extended Product-Change Notification
- Product Traceability
The UCC27512 single-channel, high-speed, low-side gate driver device is capable of effectively driving MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, UCC27512 is capable of sourcing and sinking high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 13 ns.
The UCC27512 provides 4-A source, 8-A sink (asymmetrical drive) peak-drive current capability. Strong sink capability in asymmetrical drive boosts immunity against parasitic, Miller turn-on effect.
UCC27512 is designed to operate over a wide VDD range of 4.5 V to 18 V and wide temperature range of –55°C to 125°C. Internal Under Voltage Lockout (UVLO) circuitry on VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5 V, along with best in class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | Single Channel High-Speed, Low-Side Gate Driver (With 4-A/8-A Peak Source/Sink). datasheet | 2013/6/10 | |||
| * | 輻射及可靠性報告 | UCC27512MDRSTEP Reliability Report | 2016/2/9 | |||
| 應用說明 | Review of Different Power Factor Correction (PFC) Topologies' Gate Driver Needs | PDF | HTML | 2024/1/22 | |||
| 應用說明 | Using a Single-Output Gate-Driver for High-Side or Low-Side Drive (Rev. B) | PDF | HTML | 2023/9/8 | |||
| 應用說明 | Benefits of a Compact, Powerful, and Robust Low-Side Gate Driver | PDF | HTML | 2021/11/10 | |||
| Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020/2/28 | ||||
| Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020/2/28 | ||||
| Application brief | How to overcome negative voltage transients on low-side gate drivers' inputs | 2019/1/18 | ||||
| Application brief | Enable Function with Unused Differential Input | 2018/7/11 | ||||
| Application brief | Low-Side Gate Drivers With UVLO Versus BJT Totem-Pole | 2018/3/16 |
設計與開發
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| WSON (DRS) | 6 | Ultra Librarian |
訂購與品質
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。