SBOS998D June   2021  – July 2025 BUF802

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics Wide Bandwidth Mode
    6. 5.6 Electrical Characteristics Low Quiescent Current Mode
    7. 5.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output Overvoltage Clamp
      2. 7.3.2 Adjustable Quiescent Current
      3. 7.3.3 ESD Structure
    4. 7.4 Device Functional Modes
      1. 7.4.1 Buffer Mode (BF Mode)
      2. 7.4.2 Composite Loop Mode (CL Mode)
  9. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Oscilloscope Front-End Amplifier Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Transforming a Wide-Bandwidth, 50‑Ω Input Signal Chain to High-Input Impedance
        1. 8.2.2.1 Detailed Design Procedure
        2. 8.2.2.2 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

Electrostatic Discharge Caution

BUF802 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.