SBOS998D June   2021  – July 2025 BUF802

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics Wide Bandwidth Mode
    6. 5.6 Electrical Characteristics Low Quiescent Current Mode
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input and Output Overvoltage Clamp
      2. 7.3.2 Adjustable Quiescent Current
      3. 7.3.3 ESD Structure
    4. 7.4 Device Functional Modes
      1. 7.4.1 Buffer Mode (BF Mode)
      2. 7.4.2 Composite Loop Mode (CL Mode)
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Oscilloscope Front-End Amplifier Design
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Transforming a Wide-Bandwidth, 50‑Ω Input Signal Chain to High-Input Impedance
        1. 8.2.2.1 Detailed Design Procedure
        2. 8.2.2.2 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • RGT|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

7.3.3 ESD Structure

Figure 7-7 shows the internal ESD structure of the BUF802. VSO and VS supply pins are internally shorted to each other through back-to-back diodes. See also Section 8.3. The input ESD diodes D1 and D2 are optimized to carry 100 mA of continuous current while the remaining ESD diodes are rated for 10 mA.

BUF802 Internal ESD Structure Figure 7-7 Internal ESD Structure